規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.3A |
| RdsOn(Max)@IdVgs | 250mOhm @ 1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IRF7104TRPBF is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in high-efficiency power management applications. Manufactured by Infineon Technologies, this component is part of their HEXFET® Power MOSFET series, known for low on-resistance and fast switching capabilities, making it suitable for uses in DC-DC converters, load switches, and motor control circuits.
Key specifications include a drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 7.5A per channel. The device is encapsulated in a compact SO-8 surface-mount package, making it ideal for space-constrained applications while still maintaining excellent thermal performance.
This MOSFET is designed to enhance device performance with low power loss and high efficiency, supported by its low gate charge and low on-state resistance (R_ds(on)). Additionally, it comes in a lead-free and RoHS-compliant package, aligning with environmental standards. Overall, the IRF7104TRPBF is a versatile and efficient choice for modern electronic applications demanding compact power management solutions.
Key specifications include a drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 7.5A per channel. The device is encapsulated in a compact SO-8 surface-mount package, making it ideal for space-constrained applications while still maintaining excellent thermal performance.
This MOSFET is designed to enhance device performance with low power loss and high efficiency, supported by its low gate charge and low on-state resistance (R_ds(on)). Additionally, it comes in a lead-free and RoHS-compliant package, aligning with environmental standards. Overall, the IRF7104TRPBF is a versatile and efficient choice for modern electronic applications demanding compact power management solutions.
Equivalent
The IRF7104TRPBF is a dual N-channel MOSFET. Equivalent products may include:
1. Fairchild FDS8958A
2. ON Semiconductor NTMFS4936N
3. Vishay Si4936DY
4. Alpha & Omega AO4806
These components should be verified for specific application compatibility, as parameters may vary slightly. Always consult datasheets for detailed specifications to ensure they meet your circuit requirements.
1. Fairchild FDS8958A
2. ON Semiconductor NTMFS4936N
3. Vishay Si4936DY
4. Alpha & Omega AO4806
These components should be verified for specific application compatibility, as parameters may vary slightly. Always consult datasheets for detailed specifications to ensure they meet your circuit requirements.
Features
The IRF7104TRPBF is a MOSFET transistor known for its high efficiency and reliability in electronic circuits. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (Vds) of 20V, making it suitable for low to medium voltage applications.
3. Current Rating: The device can handle a continuous drain current (Id) of up to 45A.
4. Rds(on): It features a low on-resistance, which helps to minimize power loss and improve efficiency.
5. Package: Available in a compact SO-8 package, facilitating easy surface mount technology (SMT) integration.
6. Thermal Performance: Designed to offer good thermal performance, it supports effective heat dissipation.
7. Applications: Commonly used in DC-DC converters, power management, and load switching applications.
8. Lead-Free: The device is RoHS compliant and lead-free, aligning with environmental and safety standards.
These features make the IRF7104TRPBF a versatile choice for various electronic applications requiring efficient power handling.
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (Vds) of 20V, making it suitable for low to medium voltage applications.
3. Current Rating: The device can handle a continuous drain current (Id) of up to 45A.
4. Rds(on): It features a low on-resistance, which helps to minimize power loss and improve efficiency.
5. Package: Available in a compact SO-8 package, facilitating easy surface mount technology (SMT) integration.
6. Thermal Performance: Designed to offer good thermal performance, it supports effective heat dissipation.
7. Applications: Commonly used in DC-DC converters, power management, and load switching applications.
8. Lead-Free: The device is RoHS compliant and lead-free, aligning with environmental and safety standards.
These features make the IRF7104TRPBF a versatile choice for various electronic applications requiring efficient power handling.
Pinout
The IRF7104TRPBF is a dual N-channel MOSFET in an SOIC-8 package, which means it has 8 pins in total. This MOSFET is typically used in power management applications due to its efficient switching capabilities.
Pin Count and Functions:
1. Drain1 (D1): Pin 1
2. Source1 (S1): Pin 2
3. Gate1 (G1): Pin 3
4. Source1 (S1): Pin 4
5. Source2 (S2): Pin 5
6. Gate2 (G2): Pin 6
7. Source2 (S2): Pin 7
8. Drain2 (D2): Pin 8
The IRF7104TRPBF has two MOSFETs within a single package, with each MOSFET having its own gate, source, and drain pins. This allows for dual-channel operation in a compact footprint, which is advantageous for space-constrained applications. The MOSFETs are used for switching purposes and can handle significant power levels efficiently.
Pin Count and Functions:
1. Drain1 (D1): Pin 1
2. Source1 (S1): Pin 2
3. Gate1 (G1): Pin 3
4. Source1 (S1): Pin 4
5. Source2 (S2): Pin 5
6. Gate2 (G2): Pin 6
7. Source2 (S2): Pin 7
8. Drain2 (D2): Pin 8
The IRF7104TRPBF has two MOSFETs within a single package, with each MOSFET having its own gate, source, and drain pins. This allows for dual-channel operation in a compact footprint, which is advantageous for space-constrained applications. The MOSFETs are used for switching purposes and can handle significant power levels efficiently.
Manufacturer
The IRF7104TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of electronic components. The company focuses on automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon is recognized for its innovations in power electronics, microcontrollers, digital security, and sensors.
Application
The IRF7104TRPBF is a dual N-channel MOSFET commonly used in various applications due to its efficient power switching capabilities. Key application areas include DC-DC converters, power management systems, motor control circuits, and load switching in automotive systems. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, portable electronics, and other applications requiring efficient power regulation and energy conservation. Additionally, it's often used in industrial and consumer electronics for driving inductive loads and managing power in compact, high-efficiency designs.
Package
The IRF7104TRPBF is a dual N-channel MOSFET package. It is typically available in an SO-8 surface-mount package, which is compact and designed for efficient heat dissipation.
