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IRF6710S2TRPBF
+物料清單MOSFET N-CH 25V 12A DIRECTFET
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製造商英飛淩科技
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製造商部分 #IRF6710S2TRPBF
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規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR) |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Ta), 37A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.9mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1190 pF @ 13 V |
| Power Dissipation (Max) | 1.8W (Ta), 15W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric S1 |
概述
Description
The IRF6710S2TRPBF is a power MOSFET manufactured by Infineon Technologies, designed for high-efficiency electronic applications. It features a low on-resistance (RDS(on)) to minimize power losses, making it suitable for high-current and low-voltage applications. This MOSFET operates in enhancement mode and is part of the HEXFET series, known for its reliability and performance in switching applications.
Key specifications include a drain-source voltage (VDS) of up to 100V and a continuous drain current (ID) of 57A, which make it ideal for DC-DC converters, motor drives, and other power management systems. The device is housed in a D2PAK package, offering excellent thermal performance and ease of mounting on PCBs.
The IRF6710S2TRPBF is also RoHS compliant, ensuring it meets environmental safety standards. Its robust construction and efficient operation make it a popular choice for designers looking to optimize power efficiency and performance in their electronic circuits.
Key specifications include a drain-source voltage (VDS) of up to 100V and a continuous drain current (ID) of 57A, which make it ideal for DC-DC converters, motor drives, and other power management systems. The device is housed in a D2PAK package, offering excellent thermal performance and ease of mounting on PCBs.
The IRF6710S2TRPBF is also RoHS compliant, ensuring it meets environmental safety standards. Its robust construction and efficient operation make it a popular choice for designers looking to optimize power efficiency and performance in their electronic circuits.
Equivalent
The IRF6710S2TRPBF is a power MOSFET. Equivalent products include:
1. IRF6710 - Another variant in the same family.
2. FDP8870 - Fairchild's alternative with similar specifications.
3. IPP60R199CP - From Infineon, offers similar performance.
4. STP60NF06 - By STMicroelectronics, with comparable features.
Ensure compatibility by checking datasheets for electrical characteristics and package type.
1. IRF6710 - Another variant in the same family.
2. FDP8870 - Fairchild's alternative with similar specifications.
3. IPP60R199CP - From Infineon, offers similar performance.
4. STP60NF06 - By STMicroelectronics, with comparable features.
Ensure compatibility by checking datasheets for electrical characteristics and package type.
Features
The IRF6710S2TRPBF is an N-channel MOSFET with several key features:
1. Voltage & Current Ratings: It operates with a maximum drain-source voltage (V_ds) of 30V and can handle a continuous drain current (I_d) of up to 96A.
2. R_DS(on): The device features a low on-state resistance, typically around 7 mΩ, which minimizes power loss and improves efficiency.
3. Gate Charge: It has a total gate charge (Qg) of approximately 43 nC, offering efficient switching performance.
4. Package Type: The MOSFET is available in a D2PAK package, providing good thermal performance and facilitating easy mounting on PCBs.
5. Thermal Characteristics: It supports a maximum junction temperature (T_j) of 175°C, accommodating high-temperature applications.
6. Applications: Ideal for use in high-performance power switching applications, including DC-DC converters, motor drivers, and other power management systems.
7. RoHS Compliance: The IRF6710S2TRPBF is RoHS compliant, indicating it is free from hazardous substances.
These features make it well-suited for efficient and reliable power management solutions.
1. Voltage & Current Ratings: It operates with a maximum drain-source voltage (V_ds) of 30V and can handle a continuous drain current (I_d) of up to 96A.
2. R_DS(on): The device features a low on-state resistance, typically around 7 mΩ, which minimizes power loss and improves efficiency.
3. Gate Charge: It has a total gate charge (Qg) of approximately 43 nC, offering efficient switching performance.
4. Package Type: The MOSFET is available in a D2PAK package, providing good thermal performance and facilitating easy mounting on PCBs.
5. Thermal Characteristics: It supports a maximum junction temperature (T_j) of 175°C, accommodating high-temperature applications.
6. Applications: Ideal for use in high-performance power switching applications, including DC-DC converters, motor drivers, and other power management systems.
7. RoHS Compliance: The IRF6710S2TRPBF is RoHS compliant, indicating it is free from hazardous substances.
These features make it well-suited for efficient and reliable power management solutions.
Pinout
The IRF6710S2TRPBF is a power MOSFET transistor, and it is commonly used for its high efficiency in switching applications. It typically comes in a D2PAK (TO-263) package, which usually has a 3-pin configuration plus a fourth pin as a tab for heat dissipation. Here’s a brief overview of its pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate will turn the MOSFET on or off, allowing or blocking the flow of current from drain to source.
2. Drain (D): The drain is the terminal through which the load current enters the transistor.
3. Source (S): This is the terminal through which the load current exits the transistor. It is typically connected to the ground in many circuit configurations.
Additionally, the metal tab (fourth connection) is typically connected internally to the drain for efficient heat dissipation and is used for mounting purposes.
These features make the IRF6710S2TRPBF suitable for various power management applications, including DC-DC converters and synchronous rectification.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate will turn the MOSFET on or off, allowing or blocking the flow of current from drain to source.
2. Drain (D): The drain is the terminal through which the load current enters the transistor.
3. Source (S): This is the terminal through which the load current exits the transistor. It is typically connected to the ground in many circuit configurations.
Additionally, the metal tab (fourth connection) is typically connected internally to the drain for efficient heat dissipation and is used for mounting purposes.
These features make the IRF6710S2TRPBF suitable for various power management applications, including DC-DC converters and synchronous rectification.
Manufacturer
The IRF6710S2TRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that produces a variety of electronic components, including microcontrollers, sensors, and power semiconductors. The company is well-known for providing solutions in the automotive, industrial, and consumer electronics sectors, among others. Infineon is based in Germany and is recognized for its focus on energy efficiency, mobility, and security across its product offerings.
Application
The IRF6710S2TRPBF is a power MOSFET commonly used in applications such as DC-DC converters, switch-mode power supplies (SMPS), motor drives, and high-efficiency power management systems. Its characteristics make it suitable for automotive, industrial, and consumer electronics that require efficient power delivery and control. The low R_DS(on) and high-speed switching capabilities make it ideal for applications that demand high efficiency and power density, such as battery-powered devices, telecommunications equipment, and computer hardware. Additionally, it can be utilized in applications involving load switching and power management circuits.
Package
The IRF6710S2TRPBF is packaged in a D2PAK (TO-263) surface-mount package.
