規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 37 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 920 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRF530NPBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 17A (continuous)
- Low On-Resistance (RDS(on)): 0.11Ω (max at VGS = 10V)
- Fast Switching Speed: Suitable for PWM applications
- Package: TO-220AB (through-hole, easy to mount)
Commonly used in DC-DC converters, motor control, and power supplies, the IRF530NPBF offers robust performance with a gate threshold voltage (VGS(th)) of 2–4V. It requires proper heat sinking in high-current applications due to its 94W power dissipation capability.
This MOSFET is a cost-effective choice for medium-power switching needs, balancing efficiency and durability. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 100V
- Current Rating: 17A (continuous)
- Low On-Resistance (RDS(on)): 0.11Ω (max at VGS = 10V)
- Fast Switching Speed: Suitable for PWM applications
- Package: TO-220AB (through-hole, easy to mount)
Commonly used in DC-DC converters, motor control, and power supplies, the IRF530NPBF offers robust performance with a gate threshold voltage (VGS(th)) of 2–4V. It requires proper heat sinking in high-current applications due to its 94W power dissipation capability.
This MOSFET is a cost-effective choice for medium-power switching needs, balancing efficiency and durability. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the IRF530NPBF (N-channel MOSFET, 100V, 17A, 0.11Ω) include:
- IRF530N (same specs, different packaging)
- IRF540N (higher current: 33A, 0.044Ω)
- STP55NF06L (60V, 55A, 0.02Ω)
- FQP30N06L (60V, 32A, 0.035Ω)
- IRLZ44N (55V, 47A, 0.022Ω, logic-level)
Check datasheets for exact compatibility in your circuit.
- IRF530N (same specs, different packaging)
- IRF540N (higher current: 33A, 0.044Ω)
- STP55NF06L (60V, 55A, 0.02Ω)
- FQP30N06L (60V, 32A, 0.035Ω)
- IRLZ44N (55V, 47A, 0.022Ω, logic-level)
Check datasheets for exact compatibility in your circuit.
Features
The IRF530NPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Rating: 17A continuous (ID) at 25°C
- Low On-Resistance: 0.11Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 2-4V
- Power Dissipation: 88W (TC = 25°C)
- Package: TO-220AB (through-hole, easy to mount)
- Avalanche Rated: Robust for inductive loads
Commonly used in power supplies, motor control, and switching circuits. Offers a balance of performance and cost.
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Rating: 17A continuous (ID) at 25°C
- Low On-Resistance: 0.11Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 2-4V
- Power Dissipation: 88W (TC = 25°C)
- Package: TO-220AB (through-hole, easy to mount)
- Avalanche Rated: Robust for inductive loads
Commonly used in power supplies, motor control, and switching circuits. Offers a balance of performance and cost.
Pinout
The IRF530NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- VDS: 100V
- ID: 17A (continuous)
- RDS(on): 0.11Ω (max at VGS=10V)
- Logic-Level Gate Drive: Optimized for 10V drive.
Commonly used in power switching, motor control, and DC-DC converters.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- VDS: 100V
- ID: 17A (continuous)
- RDS(on): 0.11Ω (max at VGS=10V)
- Logic-Level Gate Drive: Optimized for 10V drive.
Commonly used in power switching, motor control, and DC-DC converters.
Application
The IRF530NPBF, an N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators and DC-DC converters.
2. Motor Control – H-bridge circuits for driving motors.
3. LED Drivers – Efficient current control for lighting systems.
4. Audio Amplifiers – Class-D amplifier output stages.
5. Automotive Systems – Relays, solenoids, and electronic control units (ECUs).
Its 100V drain-source voltage and 17A current rating make it suitable for medium-power switching applications.
1. Power Supplies – Switching regulators and DC-DC converters.
2. Motor Control – H-bridge circuits for driving motors.
3. LED Drivers – Efficient current control for lighting systems.
4. Audio Amplifiers – Class-D amplifier output stages.
5. Automotive Systems – Relays, solenoids, and electronic control units (ECUs).
Its 100V drain-source voltage and 17A current rating make it suitable for medium-power switching applications.
Package
The IRF530NPBF is a power MOSFET available in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (Gate, Drain, Source) and is suitable for high-power applications. The TO-220AB package is compatible with standard PCB designs and heat sinks.
