規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 38A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 38A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2780 pF @ 25 V |
| PowerDissipation(Max) | 3.1W (Ta), 170W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概述
Description
The IRF5210SPBF is a P-channel Power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: -100V (drain-to-source)
- Current Rating: -10A (continuous drain current)
- Low On-Resistance (RDS(on)): 0.27Ω (max at VGS = -10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
Common uses include DC-DC converters, power management, and load switching. It operates with a gate threshold voltage (VGS(th)) of -2V to -4V, ensuring compatibility with logic-level drivers.
Advantages:
✔ High voltage tolerance
✔ Low power dissipation
✔ Robust thermal performance
Limitations:
✖ Requires negative gate drive (P-channel)
✖ Higher RDS(on) compared to N-channel alternatives
Ideal for battery-powered systems, inverters, and automotive applications where P-channel MOSFETs simplify circuit design. Always refer to the datasheet for detailed specs.
- Voltage Rating: -100V (drain-to-source)
- Current Rating: -10A (continuous drain current)
- Low On-Resistance (RDS(on)): 0.27Ω (max at VGS = -10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
Common uses include DC-DC converters, power management, and load switching. It operates with a gate threshold voltage (VGS(th)) of -2V to -4V, ensuring compatibility with logic-level drivers.
Advantages:
✔ High voltage tolerance
✔ Low power dissipation
✔ Robust thermal performance
Limitations:
✖ Requires negative gate drive (P-channel)
✖ Higher RDS(on) compared to N-channel alternatives
Ideal for battery-powered systems, inverters, and automotive applications where P-channel MOSFETs simplify circuit design. Always refer to the datasheet for detailed specs.
Equivalent
Equivalent products to the IRF5210SPBF (P-channel MOSFET, 100V, 24A) include:
- IRF4905SPBF (55V, 74A)
- IRF9Z34NPBF (55V, 19A)
- FQP27P06 (60V, 27A)
- STP80PF55 (55V, 80A)
- AOD4185 (80V, 42A)
Check voltage, current, and package compatibility before substitution. For exact matches, consult datasheets or distributors like Mouser/Digikey.
- IRF4905SPBF (55V, 74A)
- IRF9Z34NPBF (55V, 19A)
- FQP27P06 (60V, 27A)
- STP80PF55 (55V, 80A)
- AOD4185 (80V, 42A)
Check voltage, current, and package compatibility before substitution. For exact matches, consult datasheets or distributors like Mouser/Digikey.
Features
The IRF5210SPBF is a P-channel Power MOSFET with the following key features:
- Voltage Rating: -100V (Drain-to-Source, VDSS)
- Current Rating: -24A (Continuous Drain Current, ID)
- Low On-Resistance: 77mΩ (max at VGS = -10V)
- Fast Switching: Low gate charge (Qg = 63nC typical)
- High Power Handling: 150W (Power Dissipation)
- Avalanche Rated: Robust against inductive loads
- Package: TO-220AB (Through-hole, easy mounting)
- Logic-Level Compatible: -10V gate drive (fully enhanced)
Ideal for power switching, motor control, and DC-DC converters in industrial/automotive applications.
- Voltage Rating: -100V (Drain-to-Source, VDSS)
- Current Rating: -24A (Continuous Drain Current, ID)
- Low On-Resistance: 77mΩ (max at VGS = -10V)
- Fast Switching: Low gate charge (Qg = 63nC typical)
- High Power Handling: 150W (Power Dissipation)
- Avalanche Rated: Robust against inductive loads
- Package: TO-220AB (Through-hole, easy mounting)
- Logic-Level Compatible: -10V gate drive (fully enhanced)
Ideal for power switching, motor control, and DC-DC converters in industrial/automotive applications.
Package
The IRF5210SPBF is a Power MOSFET housed in a TO-263AB (D2PAK) surface-mount package. This package type offers efficient thermal performance and is commonly used in high-power applications. It features a lead-free, RoHS-compliant design.
