規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 16.9mOhm @ 51A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 162 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6484 pF @ 50 V |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
概述
Description
The IRF200S234 is a high-performance N-channel MOSFET designed for power switching applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 234A (pulsed)
- Low On-Resistance (RDS(on)): Typically in the milliohm range, ensuring efficient power handling.
- Fast Switching: Suitable for high-frequency applications like motor drives, inverters, and power supplies.
- Robust Packaging: Often in TO-247 or similar, aiding heat dissipation.
It’s ideal for demanding industrial and automotive systems where high current and voltage handling are critical. Always refer to the datasheet for precise specifications and thermal management guidelines.
- Voltage Rating: 200V
- Current Rating: 234A (pulsed)
- Low On-Resistance (RDS(on)): Typically in the milliohm range, ensuring efficient power handling.
- Fast Switching: Suitable for high-frequency applications like motor drives, inverters, and power supplies.
- Robust Packaging: Often in TO-247 or similar, aiding heat dissipation.
It’s ideal for demanding industrial and automotive systems where high current and voltage handling are critical. Always refer to the datasheet for precise specifications and thermal management guidelines.
Equivalent
The IRF200S234 is a high-voltage MOSFET. Equivalent or similar products include:
- IRF200S234 (same part)
- IRF200S (similar series)
- IRFP250N (comparable specs)
- STP20NM50FD (STMicro alternative)
- IXFH20N50 (IXYS alternative)
Check datasheets for exact compatibility in voltage (500V), current (20A), and package (TO-247). Always verify pinout and thermal specs before substitution.
- IRF200S234 (same part)
- IRF200S (similar series)
- IRFP250N (comparable specs)
- STP20NM50FD (STMicro alternative)
- IXFH20N50 (IXYS alternative)
Check datasheets for exact compatibility in voltage (500V), current (20A), and package (TO-247). Always verify pinout and thermal specs before substitution.
Features
The IRF200S234 is a high-performance power MOSFET with the following key features:
- Voltage Rating: 200V (drain-source, VDSS)
- Current Rating: 234A (continuous drain current, ID)
- Low On-Resistance (RDS(on)): ~1.7mΩ (typical at 10V VGS)
- Fast Switching: Optimized for high-efficiency applications
- Robust Design: Avalanche energy rated for ruggedness
- Package: TO-247 (3-pin), suitable for high-power applications
- Gate-Source Voltage (VGS): ±20V (max)
Ideal for motor drives, inverters, and high-current DC/DC converters due to its low conduction losses and high current handling.
- Voltage Rating: 200V (drain-source, VDSS)
- Current Rating: 234A (continuous drain current, ID)
- Low On-Resistance (RDS(on)): ~1.7mΩ (typical at 10V VGS)
- Fast Switching: Optimized for high-efficiency applications
- Robust Design: Avalanche energy rated for ruggedness
- Package: TO-247 (3-pin), suitable for high-power applications
- Gate-Source Voltage (VGS): ±20V (max)
Ideal for motor drives, inverters, and high-current DC/DC converters due to its low conduction losses and high current handling.
Pinout
The IRF200S234 is a power MOSFET with the following specifications:
- Pin Count: 3 (standard TO-220 package: Gate, Drain, Source)
- Function: N-channel MOSFET designed for high-power switching applications.
- Gate (G): Controls the switching operation.
- Drain (D): Connects to the load (high-voltage side).
- Source (S): Ground/reference terminal.
Key features include a 200V drain-source voltage (VDS) and 234A continuous drain current (ID), making it suitable for inverters, motor drives, and power supplies.
- Pin Count: 3 (standard TO-220 package: Gate, Drain, Source)
- Function: N-channel MOSFET designed for high-power switching applications.
- Gate (G): Controls the switching operation.
- Drain (D): Connects to the load (high-voltage side).
- Source (S): Ground/reference terminal.
Key features include a 200V drain-source voltage (VDS) and 234A continuous drain current (ID), making it suitable for inverters, motor drives, and power supplies.
Application
The IRF200S234 is a high-power MOSFET used in applications requiring efficient switching and high current handling. Key areas include:
1. Power Supplies – Switch-mode power supplies (SMPS) and DC-DC converters.
2. Motor Control – Drives for industrial motors, robotics, and EVs.
3. Renewable Energy – Solar inverters and wind power systems.
4. Industrial Equipment – Welding machines, UPS systems, and induction heating.
5. Automotive – Electric vehicle (EV) power management and battery systems.
Its low on-resistance and high voltage tolerance make it ideal for energy-efficient, high-performance applications.
1. Power Supplies – Switch-mode power supplies (SMPS) and DC-DC converters.
2. Motor Control – Drives for industrial motors, robotics, and EVs.
3. Renewable Energy – Solar inverters and wind power systems.
4. Industrial Equipment – Welding machines, UPS systems, and induction heating.
5. Automotive – Electric vehicle (EV) power management and battery systems.
Its low on-resistance and high voltage tolerance make it ideal for energy-efficient, high-performance applications.
Package
The IRF200S234 is a power MOSFET typically available in a TO-247 package, designed for high-power applications. This package type offers robust thermal performance and mechanical strength, suitable for demanding environments. The TO-247 is a through-hole package with three leads, commonly used in power electronics. Its large size aids in heat dissipation, making it ideal for high-current and high-voltage circuits.
