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IRF1018EPBF
+物料清單MOSFET N-CH 60V 79A TO220AB
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製造商英飛淩科技
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製造商部分 #IRF1018EPBF
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規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 79A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 8.4mOhm @ 47A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 69 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2290 pF @ 50 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRF1018EPBF is a specific type of power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications. This MOSFET is part of the HEXFET series, known for their reliability and performance in switching applications.
Key features of the IRF1018EPBF include:
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of around 60V and can handle a continuous drain current (I_D) of approximately 84A, making it suitable for high-power applications.
2. Low On-Resistance: The device boasts low on-state resistance, reducing power loss and improving efficiency, which is crucial for battery-operated systems and power converters.
3. Thermal Performance: It comes in a surface-mount package, enhancing heat dissipation and enabling compact design solutions.
4. Applications: Commonly used in DC-DC converters, motor drives, and other applications requiring efficient power switching.
Overall, the IRF1018EPBF is valued for its robust performance, making it a reliable choice for engineers dealing with demanding power management tasks.
Key features of the IRF1018EPBF include:
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of around 60V and can handle a continuous drain current (I_D) of approximately 84A, making it suitable for high-power applications.
2. Low On-Resistance: The device boasts low on-state resistance, reducing power loss and improving efficiency, which is crucial for battery-operated systems and power converters.
3. Thermal Performance: It comes in a surface-mount package, enhancing heat dissipation and enabling compact design solutions.
4. Applications: Commonly used in DC-DC converters, motor drives, and other applications requiring efficient power switching.
Overall, the IRF1018EPBF is valued for its robust performance, making it a reliable choice for engineers dealing with demanding power management tasks.
Equivalent
The IRF1018EPBF is a power MOSFET commonly used for switching applications. Equivalent products include the IRF1018E, IRF1018EPbF (RoHS compliant version), and similar N-channel MOSFETs with comparable voltage, current ratings, and Rds(on) specifications. When considering an equivalent, ensure the replacement meets the required voltage (typically 80V), current (around 44A), and other specifications like package type and thermal performance. Always confirm compatibility with your specific application requirements.
Features
The IRF1018EPBF is a power MOSFET designed for high-efficiency and high-speed switching applications. Key features of this component include:
1. N-Channel MOSFET: Suitable for high-side and low-side switching.
2. Low On-Resistance: Offers low R_DS(on) for efficient power conduction, minimizing power loss.
3. Fast Switching Speed: Enhances the performance in high-frequency applications.
4. High Power Capability: Supports substantial power levels, making it ideal for demanding applications.
5. Rugged Construction: Designed to withstand high voltage and current stresses.
6. Surface Mount Package: Comes in a standard package that is ideal for compact PCB designs.
7. Thermal Performance: Offers efficient thermal management, ensuring reliability and longevity.
8. RoHS Compliant: Environmentally friendly, following the Restriction of Hazardous Substances directive.
These features make the IRF1018EPBF suitable for various power conversion and management applications, including consumer electronics, industrial equipment, and automotive systems.
1. N-Channel MOSFET: Suitable for high-side and low-side switching.
2. Low On-Resistance: Offers low R_DS(on) for efficient power conduction, minimizing power loss.
3. Fast Switching Speed: Enhances the performance in high-frequency applications.
4. High Power Capability: Supports substantial power levels, making it ideal for demanding applications.
5. Rugged Construction: Designed to withstand high voltage and current stresses.
6. Surface Mount Package: Comes in a standard package that is ideal for compact PCB designs.
7. Thermal Performance: Offers efficient thermal management, ensuring reliability and longevity.
8. RoHS Compliant: Environmentally friendly, following the Restriction of Hazardous Substances directive.
These features make the IRF1018EPBF suitable for various power conversion and management applications, including consumer electronics, industrial equipment, and automotive systems.
Pinout
The IRF1018EPBF is a power MOSFET typically used in applications requiring high efficiency and fast switching. It is part of the HEXFET® family from Infineon Technologies. The device is primarily used in automotive and industrial applications.
The IRF1018EPBF comes in a standard TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the output for the current flow. It is connected to the load in the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRF1018EPBF MOSFET is known for its low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for efficient power management in various circuits.
The IRF1018EPBF comes in a standard TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the output for the current flow. It is connected to the load in the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRF1018EPBF MOSFET is known for its low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for efficient power management in various circuits.
Manufacturer
The IRF1018EPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security devices. The company primarily operates in the automotive, industrial, and consumer electronics markets, offering products that contribute to energy efficiency, mobility, and security. Infineon is recognized for its innovation and technological expertise in the semiconductor industry.
Application
The IRF1018EPBF is a power MOSFET commonly used in applications requiring efficient switching and amplification. Its key areas of application include:
1. Power Supply Circuits: Utilized in DC-DC converters and switching power supplies for efficient power management.
2. Motor Control: Employed in motor drive circuits for precise control and efficiency.
3. Automotive Systems: Used in automotive electronics for components like electric steering and fuel injection systems.
4. Lighting: Integrated in LED and other lighting systems for efficient power consumption.
5. Telecommunications: Applied in high-frequency circuits for signal amplification.
These applications leverage its low on-resistance and fast switching capabilities.
1. Power Supply Circuits: Utilized in DC-DC converters and switching power supplies for efficient power management.
2. Motor Control: Employed in motor drive circuits for precise control and efficiency.
3. Automotive Systems: Used in automotive electronics for components like electric steering and fuel injection systems.
4. Lighting: Integrated in LED and other lighting systems for efficient power consumption.
5. Telecommunications: Applied in high-frequency circuits for signal amplification.
These applications leverage its low on-resistance and fast switching capabilities.
Package
The IRF1018EPBF is typically available in a DPAK (TO-252) package type, which is a surface-mount package used for power transistors.
