規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 84A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3210 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRF1010EPBF is a N-channel Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Rating: 81A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) at 10V
- Fast Switching Speed: Optimized for minimal switching losses
- Package: TO-220AB (through-hole), lead-free and RoHS-compliant
It is commonly used in DC-DC converters, motor control, and power management circuits due to its high current handling, low conduction losses, and robustness. The EPBF suffix indicates enhanced performance and lead-free packaging.
For detailed specs, refer to the datasheet.
- Voltage Rating: 55V
- Current Rating: 81A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) at 10V
- Fast Switching Speed: Optimized for minimal switching losses
- Package: TO-220AB (through-hole), lead-free and RoHS-compliant
It is commonly used in DC-DC converters, motor control, and power management circuits due to its high current handling, low conduction losses, and robustness. The EPBF suffix indicates enhanced performance and lead-free packaging.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the IRF1010EPBF (N-channel MOSFET, 55V, 85A) include:
- IRF1010E (same specs, different packaging)
- IRF1405 (55V, 169A, lower Rds(on))
- IRF3205 (55V, 110A, common alternative)
- STP80NF55-06 (55V, 80A, STMicro alternative)
- FQP85N06 (60V, 85A, Fairchild alternative)
Check datasheets for exact compatibility in your circuit.
- IRF1010E (same specs, different packaging)
- IRF1405 (55V, 169A, lower Rds(on))
- IRF3205 (55V, 110A, common alternative)
- STP80NF55-06 (55V, 80A, STMicro alternative)
- FQP85N06 (60V, 85A, Fairchild alternative)
Check datasheets for exact compatibility in your circuit.
Features
The IRF1010EPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 55V
- Current Rating: 85A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max at VGS=10V)
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- TO-220AB Package: Easy mounting and heat dissipation
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced at 4V)
- Low Gate Charge (Qg): 63nC (typ), reducing switching losses
Ideal for power supplies, motor control, and DC-DC converters.
- Voltage Rating: 55V
- Current Rating: 85A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max at VGS=10V)
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- TO-220AB Package: Easy mounting and heat dissipation
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced at 4V)
- Low Gate Charge (Qg): 63nC (typ), reducing switching losses
Ideal for power supplies, motor control, and DC-DC converters.
Pinout
The IRF1010EPBF is a Power MOSFET with the following specifications:
- Pin Count: 3 pins (TO-220AB package)
- Gate (G): Controls switching.
- Drain (D): High-voltage/current terminal.
- Source (S): Ground/reference terminal.
- Key Functions:
- N-Channel MOSFET (Logic-Level)
- Voltage Rating: 55V
- Current Rating: 84A (continuous)
- Low On-Resistance (RDS(on)): ~12mΩ
- Fast Switching Speed
Commonly used in power switching, motor control, and DC-DC converters.
- Pin Count: 3 pins (TO-220AB package)
- Gate (G): Controls switching.
- Drain (D): High-voltage/current terminal.
- Source (S): Ground/reference terminal.
- Key Functions:
- N-Channel MOSFET (Logic-Level)
- Voltage Rating: 55V
- Current Rating: 84A (continuous)
- Low On-Resistance (RDS(on)): ~12mΩ
- Fast Switching Speed
Commonly used in power switching, motor control, and DC-DC converters.
Manufacturer
The IRF1010EPBF is manufactured by Infineon Technologies, a leading global semiconductor company specializing in power management, automotive electronics, and IoT solutions. Infineon is known for high-performance MOSFETs, power ICs, and other advanced semiconductor products.
The IRF1010EPBF is a N-channel power MOSFET designed for high-efficiency switching applications, commonly used in power supplies, motor control, and industrial systems.
Infineon, headquartered in Germany, is a key player in the semiconductor industry, serving automotive, industrial, and consumer markets with innovative and reliable solutions.
The IRF1010EPBF is a N-channel power MOSFET designed for high-efficiency switching applications, commonly used in power supplies, motor control, and industrial systems.
Infineon, headquartered in Germany, is a key player in the semiconductor industry, serving automotive, industrial, and consumer markets with innovative and reliable solutions.
Application
The IRF1010EPBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC circuits.
2. Motor Control – Drives motors in industrial, automotive, and robotics applications.
3. LED Lighting – Powers high-brightness LED drivers.
4. Audio Amplifiers – Enhances performance in Class-D audio systems.
5. Battery Management – Used in charge/discharge control circuits.
Its low on-resistance (RDS(on)) and high current handling (81A) make it ideal for high-efficiency, high-power applications.
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC circuits.
2. Motor Control – Drives motors in industrial, automotive, and robotics applications.
3. LED Lighting – Powers high-brightness LED drivers.
4. Audio Amplifiers – Enhances performance in Class-D audio systems.
5. Battery Management – Used in charge/discharge control circuits.
Its low on-resistance (RDS(on)) and high current handling (81A) make it ideal for high-efficiency, high-power applications.
Package
The IRF1010EPBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. It features three leads (gate, drain, source) and is suitable for high-current, high-voltage switching. The TO-220AB package ensures efficient heat dissipation, making it ideal for power management circuits.
