規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 2.9V |
| Current - Peak Output(Source Sink) | 200mA, 350mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 150ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The IR2109STRPBF is a high and low-side driver integrated circuit (IC) designed for driving power MOSFETs and IGBTs in half-bridge configurations. Manufactured by International Rectifier (now part of Infineon Technologies), this IC is commonly used in applications such as motor drives, power supplies, and DC-DC converters. The IR2109STRPBF features independent high and low-side referenced output channels, allowing for more flexible circuit design.
Key features include:
1. Floating Channel: Capable of driving high-side devices up to 600V.
2. Under-Voltage Lockout: Ensures safe operation by preventing the MOSFETs from operating in low-voltage conditions.
3. Dead-Time Protection: Configurable dead-time to prevent shoot-through in the half-bridge.
4. Input Logic Compatibility: Compatible with standard CMOS or LSTTL output levels for easy interfacing.
5. Bootstrap Operation: Simplifies high-side drive circuitry.
The IC is available in surface-mount packaging, making it suitable for compact and efficient designs. Its robust design and protective features make it a reliable choice for various industrial and consumer applications.
Key features include:
1. Floating Channel: Capable of driving high-side devices up to 600V.
2. Under-Voltage Lockout: Ensures safe operation by preventing the MOSFETs from operating in low-voltage conditions.
3. Dead-Time Protection: Configurable dead-time to prevent shoot-through in the half-bridge.
4. Input Logic Compatibility: Compatible with standard CMOS or LSTTL output levels for easy interfacing.
5. Bootstrap Operation: Simplifies high-side drive circuitry.
The IC is available in surface-mount packaging, making it suitable for compact and efficient designs. Its robust design and protective features make it a reliable choice for various industrial and consumer applications.
Equivalent
The IR2109STRPBF is a half-bridge gate driver IC from Infineon Technologies. Equivalent products from other manufacturers include the UCC27201A from Texas Instruments, the FAN7390 from ON Semiconductor, and the MCP14700 from Microchip Technology. These alternatives have similar functionalities and can be used in similar applications, but always check the specifications and pin configurations for compatibility with your specific design requirements.
Features
The IR2109STRPBF is a high-voltage, high-speed gate driver IC designed to drive N-channel MOSFETs or IGBTs in a half-bridge configuration. Key features include:
1. High-Voltage Tolerant: Can handle up to 600V, making it suitable for a wide range of power applications.
2. High-Speed Operation: Capable of operating at high frequencies with fast switching times, enhancing efficiency.
3. Floating Channel Design: Allows for easy bootstrap operation, simplifying the design of high-side driver circuits.
4. Under-Voltage Lockout: Provides protection by ensuring that the IC does not operate if the supply voltage is too low, preventing potential damage.
5. Gate Drive Outputs: Provides strong gate drive capability, enabling rapid and efficient switching of power MOSFETs or IGBTs.
6. Integrated Dead-Time Control: Helps prevent shoot-through by providing built-in dead-time between high-side and low-side switch operations.
7. Compact Package: Available in a SOIC-8 package, facilitating space-saving designs.
These features make the IR2109STRPBF ideal for use in motor drives, power supplies, and other applications requiring effective power switching.
1. High-Voltage Tolerant: Can handle up to 600V, making it suitable for a wide range of power applications.
2. High-Speed Operation: Capable of operating at high frequencies with fast switching times, enhancing efficiency.
3. Floating Channel Design: Allows for easy bootstrap operation, simplifying the design of high-side driver circuits.
4. Under-Voltage Lockout: Provides protection by ensuring that the IC does not operate if the supply voltage is too low, preventing potential damage.
5. Gate Drive Outputs: Provides strong gate drive capability, enabling rapid and efficient switching of power MOSFETs or IGBTs.
6. Integrated Dead-Time Control: Helps prevent shoot-through by providing built-in dead-time between high-side and low-side switch operations.
7. Compact Package: Available in a SOIC-8 package, facilitating space-saving designs.
These features make the IR2109STRPBF ideal for use in motor drives, power supplies, and other applications requiring effective power switching.
Pinout
The IR2109STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. It is typically used in applications requiring high-speed switching of power devices, such as motor drives and power supplies.
The IR2109STRPBF comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. VCC: Logic and low-side driver supply voltage.
2. IN: Logic input for the low-side and high-side driver.
3. COM: Logic ground.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. HO: High-side gate drive output.
7. VB: High-side floating supply.
8. NC: No connection.
This configuration allows the IR2109STRPBF to effectively drive both the high-side and low-side switches in a half-bridge circuit, facilitating efficient power switching and control.
The IR2109STRPBF comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. VCC: Logic and low-side driver supply voltage.
2. IN: Logic input for the low-side and high-side driver.
3. COM: Logic ground.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. HO: High-side gate drive output.
7. VB: High-side floating supply.
8. NC: No connection.
This configuration allows the IR2109STRPBF to effectively drive both the high-side and low-side switches in a half-bridge circuit, facilitating efficient power switching and control.
Manufacturer
The IR2109STRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that specializes in the design, development, and production of a wide range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial, power management, and digital security systems. Infineon is recognized for its innovation and contributions to energy efficiency, mobility, and security through semiconductor technology.
Application
The IR2109STRPBF is a high voltage, high-speed power MOSFET and IGBT driver designed for use in various applications. Key application areas include motor control, where it drives high-power motors efficiently; power supplies, to enhance the performance of switched-mode power supplies; and renewable energy systems, including solar inverters, where it helps in converting DC to AC efficiently. Additionally, it's used in uninterruptible power supplies (UPS), industrial automation, and other applications requiring efficient and reliable high-voltage power management. Its integration of bootstrap circuitry makes it suitable for half-bridge and full-bridge configurations, enhancing its versatility in various electronic applications.
Package
The IR2109STRPBF is packaged in a SOIC-8 (Small Outline Integrated Circuit) package, which is a surface-mount device.
