規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 2.9V |
| Current - Peak Output(Source Sink) | 200mA, 350mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 150ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The IR2108STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. It is designed to efficiently drive power transistors in various applications, including motor control, switch-mode power supplies, and DC-DC converters. The device features a high-side and low-side output channel, with the high-side driver capable of operating up to 600 volts, making it suitable for high-voltage applications.
Key features include a floating channel designed for bootstrap operation, a typical 120 ns propagation delay, under-voltage lockout protection, and matched propagation delay for both channels to ensure balanced driving. The IR2108STRPBF is available in a standard SOIC-8 package, which ensures a compact footprint for space-constrained applications. Its robust design and reliable performance make it an ideal choice for engineers looking to implement efficient power management solutions in their electronic designs.
Key features include a floating channel designed for bootstrap operation, a typical 120 ns propagation delay, under-voltage lockout protection, and matched propagation delay for both channels to ensure balanced driving. The IR2108STRPBF is available in a standard SOIC-8 package, which ensures a compact footprint for space-constrained applications. Its robust design and reliable performance make it an ideal choice for engineers looking to implement efficient power management solutions in their electronic designs.
Equivalent
The IR2108STRPBF is a high and low side driver typically used in power MOSFET and IGBT applications. Equivalent products include the IR2104, IR2110, and FAN7382, which offer similar functionalities like bootstrapped high-side driver capability and suitable voltage ranges. Ensure to check the specific requirements and parameters of your application, as there might be variations in features such as packaging, maximum voltage, and current handling.
Features
The IR2108STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Key features include:
1. Floating Channel Design: Capable of working with an offset voltage up to 600V, suitable for high-side and low-side configurations in half-bridge applications.
2. Gate Drive Capability: Provides 230 mA source and 520 mA sink current capabilities, allowing it to drive large capacitive loads efficiently.
3. Under-Voltage Lockout (UVLO): Protects the MOSFETs from operating in a regime where the drive capability is insufficient, ensuring reliable operation.
4. Dead-Time Protection: Includes a programmable dead-time feature to prevent shoot-through current that can occur when both high-side and low-side switches are on simultaneously.
5. CMOS and LSTTL Compatible Inputs: Ensures easy interfacing with microcontrollers and other logic circuits.
6. Bootstrap Circuitry: Simplifies the design by providing an integrated bootstrap diode necessary for high-side gate drive.
This driver is well-suited for motor drive applications, power supplies, and inverters where efficient and reliable high-voltage switch control is required.
1. Floating Channel Design: Capable of working with an offset voltage up to 600V, suitable for high-side and low-side configurations in half-bridge applications.
2. Gate Drive Capability: Provides 230 mA source and 520 mA sink current capabilities, allowing it to drive large capacitive loads efficiently.
3. Under-Voltage Lockout (UVLO): Protects the MOSFETs from operating in a regime where the drive capability is insufficient, ensuring reliable operation.
4. Dead-Time Protection: Includes a programmable dead-time feature to prevent shoot-through current that can occur when both high-side and low-side switches are on simultaneously.
5. CMOS and LSTTL Compatible Inputs: Ensures easy interfacing with microcontrollers and other logic circuits.
6. Bootstrap Circuitry: Simplifies the design by providing an integrated bootstrap diode necessary for high-side gate drive.
This driver is well-suited for motor drive applications, power supplies, and inverters where efficient and reliable high-voltage switch control is required.
Manufacturer
The IR2108STRPBF is manufactured by Infineon Technologies. Infineon is a semiconductor company that specializes in a wide range of products, including microcontrollers, sensors, and power semiconductors. They operate globally, focusing on sectors such as automotive, industrial power control, power management, and digital security solutions. Infineon is known for its innovation in energy efficiency, mobility, and security technologies, making it a key player in the semiconductor industry.
Application
The IR2108STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Its application areas include half-bridge configurations in motor control systems, power converters, and lighting ballasts. It is commonly used in areas requiring efficient switching of power transistors, such as induction heating, welding equipment, and UPS (Uninterruptible Power Supply) systems. Additionally, it is suitable for use in renewable energy inverters, like solar inverters, due to its robust performance in high-voltage applications. The driver helps in managing fast switching speeds, reducing losses, and improving overall system efficiency.
Package
The IR2108STRPBF is packaged in an 8-lead SOIC (Small Outline Integrated Circuit) package. This package type is surface-mountable, making it suitable for automated assembly processes in electronic manufacturing.
