IPW60R160P6

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IPW60R160P6

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POWER FIELD-EFFECT TRANSISTOR

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  • 製造商部分 #IPW60R160P6

  • 有存貨4666

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正品保證

規格

屬性 價值
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series CoolMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 23.8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 160mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 4.5V @ 750µA
Gate Charge(Qg)(Max) @ Vgs 44 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2080 pF @ 100 V
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41

概述

Description

IPW60R160P6 is a high‑voltage, high‑current N‑channel power MOSFET from Infineon. It is intended for switching power electronics such as switch‑mode supplies, motor drives, and PFC stages. The device blocks up to 600 V and can conduct around 60 A, with a typical on‑resistance of about 0.16 Ω at a 10 V gate drive. It uses trench MOSFET technology for fast switching and rugged performance, including a solid avalanche/surge capability. The P6 suffix denotes Infineon’s P6 power package variant (surface-mount) suitable for high‑current applications. In practice, designers use it in half‑bridge or similar topologies where a single device can replace multiple FETs, balancing conduction loss against package/drive constraints. For exact electrical data, thermal ratings, and safe‑operating‑area figures, consult the latest Infineon IPW60R160P6 datasheet.

Equivalent

IPW60R160P6 is a 600 V, 60 A N‑channel Power MOSFET with ~0.160 Ω Rds(on) in a D2PAK (P6).
Cross‑references depend on packaging and tolerance. To give exact equivalents, please confirm:
- packaging (D2PAK/TO‑263 or other)
- acceptable vendors
- Rds(on) tolerance
With those details, I’ll provide precise cross‑reference options.

Features

IPW60R160P6 is an Intelligent Power Switch (IPS) device. Key features:
- 600 V blocking voltage
- 60 A continuous current capability
- 160 mΩ typical on-resistance
- Integrated high-side MOSFET with gate drive
- Protections: undervoltage lockout, overcurrent with current limit, overtemperature/thermal shutdown
- Fault/diagnostic/status output for monitoring
- Compact P6 package suitable for automotive/industrial use
Applications: motor drives, DC-DC converters, and other high-voltage switching loads.

Pinout

Pin count: 6 pins.
Function: IPW60R160P6 is a high-current, 160 V N-channel power MOSFET in the Infineon IPW package, used as a switching device in power electronics. The drain is typically tied to the backside tab; gate and source connections are provided via the six pins.

Manufacturer

Manufacturer: Infineon Technologies AG (formerly International Rectifier).
About the company: Infineon is a German multinational semiconductor company that designs and manufactures power semiconductors and system solutions for automotive, industrial, energy, and security applications.

Application

IPW60R160P6 is a 600 V, 160 A trench IGBT module for high-efficiency switching in power electronics. Typical applications:
- Industrial motor drives (AC servo, pumps, fans, conveyors)
- Renewable-energy inverters (PV, small wind)
- Uninterruptible power supplies and active-front-end converters
- Power supplies for industrial equipment and data centers
- Welding and induction-heating equipment
- Other 600-V, medium-power switching applications
Concise, versatile use in high-power switching networks.

Package

Intelligent Power Module (IPM) in Infineon’s P6 power package (a compact, integrated half-bridge module).

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