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IPW60R080P7
+物料清單MOSFETs HIGH POWER_NEW
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製造商英飛淩科技
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製造商部分 #IPW60R080P7
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規格
| 屬性 | 價值 |
| Packaging | Tube |
概述
Description
The IPW60R080P7 also features a robust body diode and optimized gate charge, further enhancing its efficiency and reliability in various operating conditions. Designed for ease of use, this MOSFET can help designers achieve compact and cost-effective power solutions. Its TO-247 package ensures good thermal management, catering to applications needing higher power levels. Overall, the IPW60R080P7 is a versatile component ideal for developers focused on optimizing energy efficiency and performance in power electronics.
Equivalent
1. STMicroelectronics STF23N60M2
2. ON Semiconductor FDPF8N60NZ
3. Vishay SiHH26N60E
4. Toshiba TK20A60W
Ensure compatibility by comparing key specifications like voltage, current ratings, Rds(on), and package type before selection.
Features
1. Voltage Rating: It features a high voltage rating of 600V, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET offers low on-state resistance (R_DS(on)) of approximately 80mΩ, enhancing efficiency by minimizing conduction losses.
3. Fast Switching: It supports fast switching speeds, which reduces energy loss during transitions and improves overall system performance.
4. Thermal Performance: Enhanced thermal performance for better heat dissipation, allowing it to handle high power levels.
5. Ease of Use: Designed for easy integration into circuits, it is compatible with standard gate drive voltages.
6. Applications: Ideal for applications such as power supplies, adapters, and other high-efficiency power conversion systems.
7. Package Type: Typically available in a TO-247 package which is conducive for efficient heat management.
Overall, the IPW60R080P7 is engineered for efficiency, reliability, and performance in demanding electrical environments.
Pinout
The IPW60R080P7 typically comes in a TO-247 package, which has three pins. Here is a brief description of the pin functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the switching state of the MOSFET, turning it on or off.
2. Drain (D): This is the main current path into the MOSFET. It is the terminal through which the load current enters the device.
3. Source (S): The current exits the MOSFET through the source pin. It is connected to the source of the MOSFET's internal channel.
The IPW60R080P7 is typically used in applications like power supplies, lighting systems, and motor drives where efficient high-voltage switching is required.
Manufacturer
Application
1. Power Supply Units (PSUs): Used in switched-mode power supplies for computers, servers, and household appliances.
2. Solar Inverters: Helps in converting DC from solar panels to AC for home or grid use.
3. Motor Drives: Applied in industrial and consumer motor drives for improved control and efficiency.
4. Telecommunications: Utilized in telecom power solutions to enhance energy efficiency.
5. Renewable Energy Systems: Supports efficient energy conversion and management in wind and solar applications.
Its high efficiency and low power loss make it suitable for applications requiring reliable power management.