圖片僅供參考
規格
| 屬性 | 價值 |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS CE |
| Factory Pack Quantity | 240 |
| Subcategory | Transistors |
| Part # Aliases | SP000358192 IPW6R75CPXK IPW60R075CPFKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Width | 5.21 mm |
| Unit Weight | 0.211644 oz |
| Package / Case | TO-247-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 39 A |
| Rds On | 68 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 116 nC |
| Pd - Power Dissipation | 313 W |
| Channel Mode | Enhancement |
| Fall Time | 7 ns |
| Rise Time | 17 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 110 ns |
| Typical Turn - On Delay Time | 40 ns |
概述
Description
The IPW60R075CP is a high-performance N-channel MOSFET designed for various power applications, including industrial and automotive systems. With a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 75A, it is capable of handling substantial power levels. This device features a low on-resistance (Rds(on)) of 0.075 ohms, which contributes to improved efficiency and reduced heat generation during operation.
The IPW60R075CP is typically utilized in applications such as power supplies, motor drives, and converters, where effective switching and thermal management are critical. The MOSFET is housed in a TO-220 package, allowing for easy heat dissipation and mounting.
Designed for fast switching speeds, this component enhances system performance and reliability. Overall, the IPW60R075CP is favored for its balance of high voltage ratings, robust current handling, and efficient thermal characteristics, making it suitable for demanding electronic applications.
The IPW60R075CP is typically utilized in applications such as power supplies, motor drives, and converters, where effective switching and thermal management are critical. The MOSFET is housed in a TO-220 package, allowing for easy heat dissipation and mounting.
Designed for fast switching speeds, this component enhances system performance and reliability. Overall, the IPW60R075CP is favored for its balance of high voltage ratings, robust current handling, and efficient thermal characteristics, making it suitable for demanding electronic applications.
Equivalent
The IPW60R075CP is a N-channel MOSFET from Infineon, rated for 600V and 75A. Equivalent products include the STP6NA75, IRF840, and FDPF75N60. It's essential to check specific parameters like RDS(on), gate charge, and thermal performance for precise applications. Always consult datasheets to ensure compatibility.
Features
The IPW60R075CP is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a maximum continuous drain current (I_D) of 75A, making it suitable for demanding power circuits.
3. R_DS(on): Offers a low on-resistance of 0.075 ohms, which contributes to reduced power losses and improved efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) in the range of 2-4V, allowing for easy drive requirements.
5. Fast Switching Speed: Designed for fast switching applications, enhancing performance in converters and inverters.
6. Thermal Management: Features a TO-247 package, providing efficient heat dissipation and ease of mounting.
Overall, the IPW60R075CP is ideal for power supply, motor control, and renewable energy systems where high efficiency and reliability are paramount.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a maximum continuous drain current (I_D) of 75A, making it suitable for demanding power circuits.
3. R_DS(on): Offers a low on-resistance of 0.075 ohms, which contributes to reduced power losses and improved efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) in the range of 2-4V, allowing for easy drive requirements.
5. Fast Switching Speed: Designed for fast switching applications, enhancing performance in converters and inverters.
6. Thermal Management: Features a TO-247 package, providing efficient heat dissipation and ease of mounting.
Overall, the IPW60R075CP is ideal for power supply, motor control, and renewable energy systems where high efficiency and reliability are paramount.
Pinout
The IPW60R075CP is an N-channel MOSFET with a pin count of 3. Its primary functions are to act as a power switch in various applications, including power management and DC-DC converters. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a positive voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IPW60R075CP has a voltage rating of 600V and a current rating of 75A, making it suitable for high-voltage applications.
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a positive voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IPW60R075CP has a voltage rating of 600V and a current rating of 75A, making it suitable for high-voltage applications.
Manufacturer
The IPW60R075CP is manufactured by Infineon Technologies, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovative technologies in areas such as energy efficiency, mobility, and the Internet of Things (IoT). Infineon serves various industries, including automotive, industrial, and consumer electronics, and is committed to advancing sustainable technologies and solutions. The IPW60R075CP is a part of their IGBT (Insulated Gate Bipolar Transistor) product line, which is designed for high-performance applications in power electronics.
Application
The IPW60R075CP is an N-channel MOSFET primarily used in power electronics applications. Its key application areas include:
1. Switching Power Supplies: Efficient voltage regulation and power conversion.
2. Motor Drives: Control of DC motors and brushless motors in industrial and automotive systems.
3. DC-DC Converters: Used in step-down and step-up converters for energy efficiency.
4. Inverters: Essential in renewable energy systems, such as solar inverters.
5. LED Drivers: Regulating power in LED lighting applications.
Its high voltage and current ratings make it suitable for high-performance applications.
1. Switching Power Supplies: Efficient voltage regulation and power conversion.
2. Motor Drives: Control of DC motors and brushless motors in industrial and automotive systems.
3. DC-DC Converters: Used in step-down and step-up converters for energy efficiency.
4. Inverters: Essential in renewable energy systems, such as solar inverters.
5. LED Drivers: Regulating power in LED lighting applications.
Its high voltage and current ratings make it suitable for high-performance applications.
Package
The IPW60R075CP is packaged in a TO-247 type package. This package is designed for power devices, offering good thermal performance and ease of mounting for heat dissipation.
