圖片僅供參考
規格
| 屬性 | 價值 |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | OptiMOS |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 34 |
| Maximum Drain Source Resistance (M Ohm) | 32@10V |
| Typical Gate Charge @ Vgs (n C) | 22@10V |
| Typical Gate Charge @ 10 V (n C) | 22 |
| Typical Input Capacitance @ Vds (p F) | 1770@100V |
| Maximum Power Dissipation (m W) | 136000 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 9 |
| Typical Turn - Off Delay Time (ns) | 21 |
| Typical Turn - On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Mounting Type | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Package / Case | TO |
| Supplier Device Package | TO-220 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (u A) | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Tab | Tab |
| Maximum Gate Source Leakage Current (n A) | 100 |
| Typical Gate to Drain Charge (n C) | 3 |
| Typical Gate to Source Charge (n C) | 8 |
| Typical Reverse Recovery Charge (n C) | 500 |
| Typical Switch Charge (n C) | 5 |
| Typical Reverse Transfer Capacitance @ Vds (p F) | 4@100V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (p F) | 135 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 136 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C / W) | 40 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Reverse Recovery Time (ns) | 110 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 3 |
| Maximum Positive Gate Source Voltage (V) | 20 |
概述
Description
The IPP320N20N3G is an N-channel power MOSFET designed for high-efficiency applications. It belongs to the Infineon’s CoolMOS™ series, optimized for energy efficiency and thermal performance. With a voltage rating of 200V and a maximum continuous current of 320A, it is suitable for power supply, motor control, and industrial applications.
Key features include low on-resistance (RDS(on)), fast switching speeds, and high reliability, making it suitable for applications that require efficient power conversion and management. Its robust design allows it to handle high temperatures and demanding environments, ensuring longevity and stability.
The gate threshold voltage is low, facilitating easier drive requirements, while its high breakdown voltage enhances its capability in various applications. Overall, the IPP320N20N3G is an ideal choice for engineers looking to improve performance and efficiency in power electronics designs.
Key features include low on-resistance (RDS(on)), fast switching speeds, and high reliability, making it suitable for applications that require efficient power conversion and management. Its robust design allows it to handle high temperatures and demanding environments, ensuring longevity and stability.
The gate threshold voltage is low, facilitating easier drive requirements, while its high breakdown voltage enhances its capability in various applications. Overall, the IPP320N20N3G is an ideal choice for engineers looking to improve performance and efficiency in power electronics designs.
Equivalent
The IPP320N20N3G is an N-channel MOSFET. Equivalent products include the STP320N20, FDP320N20, and IRF320. Ensure to verify specifications like voltage, current, RDS(on), and package type for compatibility in your specific application. Additionally, check manufacturer datasheets for precise matching.
Features
The IPP320N20N3G is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 200V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 320A, allowing for significant power handling.
3. Low On-Resistance: R_DS(on) typically around 0.045 ohms, reducing conduction losses and improving efficiency.
4. Fast Switching: Capable of high-frequency operation, making it suitable for switch-mode power supplies and converters.
5. Thermal Performance: Robust thermal characteristics with a high maximum junction temperature of 175°C, ensuring reliable operation under demanding conditions.
6. Package Type: Offered in a TO-220 package, facilitating easy heat dissipation and integration into various cooling solutions.
7. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)), allowing for easy drive with low-power gate signals.
These features make the IPP320N20N3G ideal for applications in renewable energy, automotive, and industrial sectors.
1. Voltage Rating: 200V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 320A, allowing for significant power handling.
3. Low On-Resistance: R_DS(on) typically around 0.045 ohms, reducing conduction losses and improving efficiency.
4. Fast Switching: Capable of high-frequency operation, making it suitable for switch-mode power supplies and converters.
5. Thermal Performance: Robust thermal characteristics with a high maximum junction temperature of 175°C, ensuring reliable operation under demanding conditions.
6. Package Type: Offered in a TO-220 package, facilitating easy heat dissipation and integration into various cooling solutions.
7. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)), allowing for easy drive with low-power gate signals.
These features make the IPP320N20N3G ideal for applications in renewable energy, automotive, and industrial sectors.
Pinout
The IPP320N20N3G is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-performance applications, offering enhanced efficiency and thermal characteristics. It is suitable for use in power management, switching applications, and in circuits requiring high-speed switching.
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-performance applications, offering enhanced efficiency and thermal characteristics. It is suitable for use in power management, switching applications, and in circuits requiring high-speed switching.
Manufacturer
The IPP320N20N3G is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in various areas, including automotive, industrial power control, and security technologies. The company develops and produces a wide range of semiconductor products, including power transistors, microcontrollers, and sensors, catering to diverse applications such as automotive electronics, industrial automation, and communication technologies. Infineon is known for its innovation in power management and energy efficiency solutions, making it a key player in the global semiconductor market.
Application
The IPP320N20N3G is a N-channel MOSFET primarily used in power management applications. Its high voltage and current ratings make it suitable for:
1. Switching Power Supplies: Efficient power conversion in industrial and consumer electronics.
2. Motor Drives: Control of DC and AC motors in automotive and industrial applications.
3. LED Drivers: High-efficiency lighting applications.
4. Power Inverters: Conversion of DC to AC in renewable energy systems like solar inverters.
5. Battery Management Systems: Protection and efficiency in electric vehicles and portable devices.
Its robustness and efficiency make it ideal for various high-performance applications in electronic systems.
1. Switching Power Supplies: Efficient power conversion in industrial and consumer electronics.
2. Motor Drives: Control of DC and AC motors in automotive and industrial applications.
3. LED Drivers: High-efficiency lighting applications.
4. Power Inverters: Conversion of DC to AC in renewable energy systems like solar inverters.
5. Battery Management Systems: Protection and efficiency in electric vehicles and portable devices.
Its robustness and efficiency make it ideal for various high-performance applications in electronic systems.
Package
The IPP320N20N3G is typically packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.
