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規格
| 屬性 | 價值 |
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 3.4mΩ@10V,100A |
| DraintoSourceVoltage | 75V |
| Pd-PowerDissipation | 214W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 66pF |
| InputCapacitance(Ciss@Vds) | 8.13nF |
| GateThresholdVoltage(Vgs(th)@Id) | 3.8V |
| GateCharge(Qg) | 117nC@10V |
| Number | 1 N-channel |
概述
Description
IPP034NE7N3G is a specific designation that may refer to a product, technology, or a component within a particular field, but there is limited public information available about it. Without additional context, it’s challenging to provide a precise introduction. Typically, such designations can be associated with electronic components, software versions, or industrial equipment.
If you have a specific context in mind—such as an industry (like electronics, automotive, etc.), usage, or function—please provide that information for a more tailored response.
If you have a specific context in mind—such as an industry (like electronics, automotive, etc.), usage, or function—please provide that information for a more tailored response.
Equivalent
The IPP034NE7N3G is a N-channel MOSFET. Equivalent products include the IRLZ34N, BSS138, and AO3400. Ensure to check specifications like R_DS(on), V_DS, and current ratings to confirm compatibility for your specific application. Always verify with the manufacturer’s datasheets for the most accurate replacements.
Features
The IPP034NE7N3G is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, suitable for various applications.
2. Current Capability: Offers a continuous drain current (I_D) of up to 34A, enabling effective power handling.
3. R_DS(on): Low on-resistance (typically around 8.5 mΩ), ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) in the range of 1-2.5V, allowing for easy drive with low gate voltages.
5. Fast Switching Speed: Designed for high-frequency applications, achieving rapid turn-on and turn-off times.
6. Package Type: Available in a compact DPAK package, facilitating space-saving designs.
These features make the IPP034NE7N3G ideal for applications like DC-DC converters, motor drives, and power management systems where efficiency and performance are critical.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, suitable for various applications.
2. Current Capability: Offers a continuous drain current (I_D) of up to 34A, enabling effective power handling.
3. R_DS(on): Low on-resistance (typically around 8.5 mΩ), ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) in the range of 1-2.5V, allowing for easy drive with low gate voltages.
5. Fast Switching Speed: Designed for high-frequency applications, achieving rapid turn-on and turn-off times.
6. Package Type: Available in a compact DPAK package, facilitating space-saving designs.
These features make the IPP034NE7N3G ideal for applications like DC-DC converters, motor drives, and power management systems where efficiency and performance are critical.
Pinout
The IPP034NE7N3G is an N-channel MOSFET with a pin count of 4. Its primary functions include acting as a switch or amplifier in electronic circuits. The pin configuration is as follows:
1. Gate (G): Used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the main current flows out when the device is on.
3. Source (S): The terminal where the current enters the MOSFET when it's in the on state.
4. Body/Emitter (B): Typically internally connected to the source and not usually externally accessed.
This device is designed for efficient switching applications, with low on-resistance and fast switching speeds. It is commonly used in power management, motor drivers, and other high-efficiency applications.
1. Gate (G): Used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the main current flows out when the device is on.
3. Source (S): The terminal where the current enters the MOSFET when it's in the on state.
4. Body/Emitter (B): Typically internally connected to the source and not usually externally accessed.
This device is designed for efficient switching applications, with low on-resistance and fast switching speeds. It is commonly used in power management, motor drivers, and other high-efficiency applications.
Manufacturer
The IPP034NE7N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions across various sectors, including automotive, industrial, and consumer electronics. The company is known for its focus on power management, connectivity, security, and sensor technologies. Infineon serves global markets and plays a pivotal role in advancing electronic components that support energy efficiency and innovative technologies.
Application
The IPP034NE7N3G is an N-channel MOSFET designed for high-performance applications. Its primary application areas include power management in DC-DC converters, motor drivers, and power supplies. It is suitable for use in renewable energy systems, such as solar inverters, as well as in electric vehicles for power switching. Additionally, it can be utilized in consumer electronics and industrial automation systems where efficient energy conversion and control are required. The device's low on-resistance and fast switching capabilities enhance efficiency in various electronic circuits.
Package
The IPP034NE7N3G is typically packaged in a TO-247 package type, which is a type of flat, three-terminal package commonly used for high-power applications.
