規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ P7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 360mOhm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 140µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 555 pF @ 400 V |
| Power Dissipation (Max) | 7W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
概述
Description
The IPN60R360P7SATMA1 is a 600V, 36A Infineon CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications. Key features include:
- Low RDS(on): 360mΩ (max) for reduced conduction losses.
- Fast switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robustness: Avalanche-rated and improved thermal performance.
- Package: TO-220 (through-hole) for easy mounting.
Ideal for AC/DC converters, PFC stages, and industrial power systems, it balances performance and cost. Check the datasheet for detailed specs.
- Low RDS(on): 360mΩ (max) for reduced conduction losses.
- Fast switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robustness: Avalanche-rated and improved thermal performance.
- Package: TO-220 (through-hole) for easy mounting.
Ideal for AC/DC converters, PFC stages, and industrial power systems, it balances performance and cost. Check the datasheet for detailed specs.
Equivalent
Equivalent products to the IPN60R360P7SATMA1 (Infineon 600V CoolMOS P7) include:
- STP60R360M2 (STMicroelectronics)
- IPP60R360P7 (Infineon, similar series)
- FCP60R360 (ON Semiconductor)
These are 600V, ~360mΩ MOSFETs with comparable performance. Verify datasheets for exact specs.
- STP60R360M2 (STMicroelectronics)
- IPP60R360P7 (Infineon, similar series)
- FCP60R360 (ON Semiconductor)
These are 600V, ~360mΩ MOSFETs with comparable performance. Verify datasheets for exact specs.
Features
The IPN60R360P7SATMA1 is a 600V, 25A CoolMOS™ P7 superjunction MOSFET from Infineon, optimized for high efficiency and robustness. Key features:
- Low RDS(on): 360mΩ (max) at 25A, reducing conduction losses.
- Fast switching: Low gate charge (Qg ≈ 22nC) and output charge (Qoss ≈ 110nC) for minimal switching losses.
- High dv/dt ruggedness: Enhanced reliability in hard-switching applications.
- Avalanche-rated: Withstands high energy pulses (EAS ≈ 240mJ).
- Low thermal resistance: RthJC ≈ 1.5K/W for better heat dissipation.
- Logic-level drive: Compatible with 10V gate drive (VGS).
- Pb-free & RoHS-compliant: Environmentally friendly.
Ideal for SMPS, PFC, and industrial apps requiring high efficiency and durability.
- Low RDS(on): 360mΩ (max) at 25A, reducing conduction losses.
- Fast switching: Low gate charge (Qg ≈ 22nC) and output charge (Qoss ≈ 110nC) for minimal switching losses.
- High dv/dt ruggedness: Enhanced reliability in hard-switching applications.
- Avalanche-rated: Withstands high energy pulses (EAS ≈ 240mJ).
- Low thermal resistance: RthJC ≈ 1.5K/W for better heat dissipation.
- Logic-level drive: Compatible with 10V gate drive (VGS).
- Pb-free & RoHS-compliant: Environmentally friendly.
Ideal for SMPS, PFC, and industrial apps requiring high efficiency and durability.
Package
The IPN60R360P7SATMA1 is a 600V CoolMOS™ P7 power MOSFET from Infineon, designed for high-efficiency applications. It comes in a TO-220 package, a common through-hole type known for good thermal performance and ease of mounting. Key specs include 360mΩ on-resistance (RDS(on)) and 10A current rating. Suitable for switching power supplies, motor drives, and lighting.
