IPG20N06S2L50AATMA1

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IPG20N06S2L50AATMA1

+物料清單

MOSFET 2N-CH 55V 20A 8TDSON

  • 製造商英飛淩科技

  • 製造商部分 #IPG20N06S2L50AATMA1

  • 包裹 VDFN-8

  • 有存貨6087

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正品保證

規格

屬性 價值
Supplier Infineon Technologies,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Bulk
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain(Id) @ 25°C 20A
Rds On(Max) @ Id Vgs 50mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2V @ 19µA
Gate Charge(Qg)(Max) @ Vgs 17nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 560pF @ 25V
Power - Max 51W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank

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