規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 10.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 380mOhm @ 3.8A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 320µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 700 pF @ 100 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
概述
Description
The IPD60R380C6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. Part of the CoolMOS™ C6 series, it is optimized for high-voltage applications, offering a drain-source voltage (V_ds) of 600V. This makes it suitable for use in power supplies, lighting, and other high-voltage circuits. The device features a low on-resistance (R_ds(on)) of 0.38 ohms, which aids in reducing power losses and improving efficiency.
The IPD60R380C6 is built using advanced silicon technology, allowing for reduced gate charge and improved switching performance. It operates at high frequencies, making it ideal for use in high-efficiency power conversion systems. The transistor is available in a TO-252 (DPAK) package, which provides a balance of thermal performance and compact size.
Overall, the IPD60R380C6 is a reliable choice for engineers seeking to implement efficient and robust power systems, thanks to its high voltage capability, low resistance, and enhanced thermal characteristics.
The IPD60R380C6 is built using advanced silicon technology, allowing for reduced gate charge and improved switching performance. It operates at high frequencies, making it ideal for use in high-efficiency power conversion systems. The transistor is available in a TO-252 (DPAK) package, which provides a balance of thermal performance and compact size.
Overall, the IPD60R380C6 is a reliable choice for engineers seeking to implement efficient and robust power systems, thanks to its high voltage capability, low resistance, and enhanced thermal characteristics.
Equivalent
The IPD60R380C6 is a power MOSFET from Infineon, belonging to the CoolMOS™ C6 series. Equivalent products may include other power MOSFETs with similar specifications from manufacturers like STMicroelectronics' STP6NK60Z, ON Semiconductor's FDPF5N60NZ, and Vishay's IRFPG50. When looking for equivalents, consider key specifications such as voltage rating, current rating, RDS(on), and package type to ensure compatibility with your application. Always refer to the datasheets to confirm suitability.
Features
The IPD60R380C6 is a power MOSFET from Infineon's CoolMOS™ C6 series. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 11.5A. This N-channel enhancement mode MOSFET is known for its low on-state resistance (R_DS(on)) of 0.38 ohms, which enhances performance by minimizing conduction losses. It is designed for high efficiency and fast switching applications, thanks to its optimized gate charge and low switching losses.
Key features include:
- High voltage capability (600V) suitable for a wide range of applications.
- Low R_DS(on) for reduced conduction losses and improved efficiency.
- Fast switching speeds for applications requiring rapid on/off cycles.
- Robust avalanche capability for enhanced reliability.
- Suitable for applications such as power supplies, adapters, lighting, and industrial systems.
The IPD60R380C6 is designed to offer a balance between performance and efficiency, making it a suitable choice for high-frequency switching applications in power conversion systems.
Key features include:
- High voltage capability (600V) suitable for a wide range of applications.
- Low R_DS(on) for reduced conduction losses and improved efficiency.
- Fast switching speeds for applications requiring rapid on/off cycles.
- Robust avalanche capability for enhanced reliability.
- Suitable for applications such as power supplies, adapters, lighting, and industrial systems.
The IPD60R380C6 is designed to offer a balance between performance and efficiency, making it a suitable choice for high-frequency switching applications in power conversion systems.
Pinout
The IPD60R380C6 is a power MOSFET from Infineon's CoolMOS series. It usually comes in a TO-252 (DPAK) package. This package typically has three pins, which are:
1. Gate (G): This pin is used to control the conductivity between the drain and source. It turns the MOSFET on or off by applying the appropriate voltage level.
2. Drain (D): This is the main current input or output terminal. When the MOSFET is on, current flows through this pin to the source pin.
3. Source (S): This is the main current output or input terminal. It is typically connected to the ground in most applications.
Additionally, the metal tab on the package can also be connected internally to the drain for better heat dissipation. This MOSFET is optimized for high voltage power conversion applications, offering low on-resistance and fast switching capabilities.
1. Gate (G): This pin is used to control the conductivity between the drain and source. It turns the MOSFET on or off by applying the appropriate voltage level.
2. Drain (D): This is the main current input or output terminal. When the MOSFET is on, current flows through this pin to the source pin.
3. Source (S): This is the main current output or input terminal. It is typically connected to the ground in most applications.
Additionally, the metal tab on the package can also be connected internally to the drain for better heat dissipation. This MOSFET is optimized for high voltage power conversion applications, offering low on-resistance and fast switching capabilities.
Manufacturer
The IPD60R380C6 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. They are known for producing semiconductors for automotive, industrial, and consumer electronics applications. Infineon's products include power electronics, microcontrollers, sensors, and security solutions, catering to industries such as automotive, industrial power control, power management, and digital security. The company is recognized for its contributions to energy efficiency, mobility, and security technologies.
Application
The IPD60R380C6 is a power MOSFET commonly used in applications requiring high efficiency and robust performance. Its primary application areas include:
1. Switch Mode Power Supplies (SMPS): Used in AC-DC converters for efficiency.
2. Motor Drives: Utilized in controlling electric motors in industrial and automotive applications.
3. Inverters: Employed in DC-AC conversion for renewable energy systems like solar inverters.
4. Lighting: Used in LED drivers for efficient power management.
5. Uninterruptible Power Supplies (UPS): Helps in maintaining power supply continuity.
6. Telecommunications: Used in power supplies for telecom infrastructure.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.
1. Switch Mode Power Supplies (SMPS): Used in AC-DC converters for efficiency.
2. Motor Drives: Utilized in controlling electric motors in industrial and automotive applications.
3. Inverters: Employed in DC-AC conversion for renewable energy systems like solar inverters.
4. Lighting: Used in LED drivers for efficient power management.
5. Uninterruptible Power Supplies (UPS): Helps in maintaining power supply continuity.
6. Telecommunications: Used in power supplies for telecom infrastructure.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.
Package
The IPD60R380C6 is typically available in a TO-252 package, which is also known as DPAK. This package is commonly used for surface-mount power MOSFETs, offering a compact design with efficient thermal performance.
