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規格
| 屬性 | 價值 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 100 A |
| Rds On | 2.8 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 128 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 150 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 5 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 70 ns |
| Series | OptiMOS-T2 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 30 ns |
| Width | 6.22 mm |
| Part # Aliases | IPD1N6S43XT SP000415576 IPD100N06S403ATMA1 |
| Unit Weight | 0.011640 oz |
概述
Description
The IPD100N06S4-03 is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain currents up to 100A, making it suitable for high-power applications. The device is characterized by low on-resistance (R_DS(on)), typically around 4.1 mΩ, which minimizes conduction losses and enhances efficiency in applications such as motor drives, power supplies, and DC-DC converters.
With a fast switching speed, the IPD100N06S4-03 is ideal for applications requiring rapid switching, reducing the overall heat generated during operation. It comes in a DPAK package, which facilitates effective heat dissipation and simplifies PCB layout. The MOSFET is also designed to be robust, with built-in ESD protection, ensuring reliability in various operating conditions. Overall, the IPD100N06S4-03 is a versatile component suitable for engineers looking to optimize power efficiency in their designs.
With a fast switching speed, the IPD100N06S4-03 is ideal for applications requiring rapid switching, reducing the overall heat generated during operation. It comes in a DPAK package, which facilitates effective heat dissipation and simplifies PCB layout. The MOSFET is also designed to be robust, with built-in ESD protection, ensuring reliability in various operating conditions. Overall, the IPD100N06S4-03 is a versatile component suitable for engineers looking to optimize power efficiency in their designs.
Equivalent
The IPD100N06S4-03 is an N-channel MOSFET from Infineon, commonly used in power management applications. Equivalent products include the IRF100N06, STP100N06, and FQP100N06. When selecting an equivalent, ensure similar specifications like V_DS, I_D, R_DS(on), and thermal performance to maintain compatibility in your application. Always verify with datasheets for exact parameters.
Features
The IPD100N06S4-03 is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for a variety of applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 100A, providing robust performance.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 3.4 mΩ, which minimizes power loss during operation.
4. Package: Available in a TO-220 package, it offers good thermal performance for heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 1-2V, allowing for easier control in low-voltage applications.
6. Fast Switching: It supports fast switching speeds, making it suitable for PWM applications and efficient power conversion.
These features make the IPD100N06S4-03 suitable for applications in motor control, power supplies, and industrial automation.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for a variety of applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 100A, providing robust performance.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 3.4 mΩ, which minimizes power loss during operation.
4. Package: Available in a TO-220 package, it offers good thermal performance for heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 1-2V, allowing for easier control in low-voltage applications.
6. Fast Switching: It supports fast switching speeds, making it suitable for PWM applications and efficient power conversion.
These features make the IPD100N06S4-03 suitable for applications in motor control, power supplies, and industrial automation.
Pinout
The IPD100N06S4-03 is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various applications such as power management and DC-DC converters. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's operation (turns it on/off).
2. Drain (D) - The terminal where the current flows out of the MOSFET.
3. Source (S) - The terminal where the current flows into the MOSFET.
The specific pinout may vary slightly depending on the package type (e.g., TO-220, SO-8), so it's essential to refer to the datasheet for the exact pin assignments and to ensure proper implementation in circuit designs. The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications.
1. Gate (G) - Controls the MOSFET's operation (turns it on/off).
2. Drain (D) - The terminal where the current flows out of the MOSFET.
3. Source (S) - The terminal where the current flows into the MOSFET.
The specific pinout may vary slightly depending on the package type (e.g., TO-220, SO-8), so it's essential to refer to the datasheet for the exact pin assignments and to ensure proper implementation in circuit designs. The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications.
Manufacturer
The IPD100N06S4-03 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development of semiconductor and system solutions, focusing on automotive, industrial power control, and digital security applications. The company is known for its innovative technologies in power management, microcontrollers, and sensor solutions, catering to a range of industries including automotive, IoT, and consumer electronics. Infineon is recognized for its commitment to sustainability and energy efficiency, contributing to advancements in electrification and automation.
Application
The IPD100N06S4-03 is a high-performance N-channel MOSFET suitable for various applications, including:
1. Power Supplies: Used in DC-DC converters and switching power supplies for efficient voltage regulation.
2. Motor Control: Drives for DC motors and brushless motors in automotive and industrial applications.
3. Class D Audio Amplifiers: Enhances audio amplification systems with improved efficiency.
4. LED Lighting: Controls LED drivers for efficient lighting solutions.
5. Battery Management Systems: Manages charging and discharging cycles in battery packs.
6. Telecommunications: Used in RF amplifiers and signal processing equipment.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
1. Power Supplies: Used in DC-DC converters and switching power supplies for efficient voltage regulation.
2. Motor Control: Drives for DC motors and brushless motors in automotive and industrial applications.
3. Class D Audio Amplifiers: Enhances audio amplification systems with improved efficiency.
4. LED Lighting: Controls LED drivers for efficient lighting solutions.
5. Battery Management Systems: Manages charging and discharging cycles in battery packs.
6. Telecommunications: Used in RF amplifiers and signal processing equipment.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
Package
The IPD100N06S4-03 is available in a TO-220 package type. This package is designed for high-power applications, providing good thermal performance and easy mounting on heat sinks.
