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IPD100N04S4-02
+物料清單MOSFETs N-Ch 40V 100A DPAK-2 OptiMOS-T2
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製造商英飛淩科技
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製造商部分 #IPD100N04S4-02
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有存貨6559
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Packaging | MouseReel |
| StandardPackQty | 2500 |
概述
Description
To understand what "IPD100N04S4-02" entails, you would generally refer to the course catalog or syllabus provided by the institution offering it. This document would contain details such as the course title, objectives, curriculum, prerequisites, and evaluation methods. It may also include information about the instructor, class schedule, and required materials.
If you're looking for information specific to this course, it would be best to consult the academic institution's resources or contact the department directly for detailed information.
Equivalent
1. IRLB8743PBF by Infineon
2. NTP75N04 by ON Semiconductor
3. FDP8440 by Fairchild Semiconductor
4. IPD90N04S4-03 by Infineon
Ensure to verify the exact specifications and thermal characteristics when selecting an equivalent to match your specific application needs.
Features
1. Type: N-channel MOSFET
2. Voltage Rating: It can handle a maximum drain-source voltage (V_ds) of 40V.
3. Current Capacity: The device supports a maximum continuous drain current of 100A.
4. R_DS(on): The on-state resistance is low, typically around 4.0 mΩ, which helps in reducing power loss and increasing efficiency.
5. Package: Usually available in a TO-252 package, which is conducive for surface mounting.
6. Technology: Utilizes trench technology to optimize performance.
7. Applications: Commonly used in power management, DC-DC converters, motor drives, and as a switch in battery-powered devices.
8. Thermal Performance: Designed for efficient heat dissipation, allowing for effective thermal management in compact systems.
These features make the IPD100N04S4-02 suitable for high-efficiency and high-power applications where space and power loss are critical considerations.
Pinout
- Pin Count: It typically comes in a TO-252 (DPAK) package which has 3 pins. The pins are as follows:
1. Gate (G): Controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): The terminal that serves as the return path for the current flowing through the drain.
- Function: The IPD100N04S4-02 is designed for use in power management applications, including DC-DC converters, motor drives, and other switching applications. It offers low on-resistance and high efficiency, making it suitable for high-performance applications. The MOSFET's characteristics allow for efficient switching and power handling, which are critical for optimizing electronic device performance.
Manufacturer
Application
1. Automotive Systems: Used in powertrain components, electric vehicle battery management, and motor control systems.
2. Industrial Automation: Suitable for motor drives, inverters, and power supplies.
3. Consumer Electronics: Employed in power adapters, LED drivers, and battery-powered devices.
4. Telecommunications: Utilized in power amplifiers and power distribution units for network infrastructure.
5. Renewable Energy: Applied in solar inverters and other energy conversion systems.
These applications benefit from the device's low on-resistance, fast switching capabilities, and high current handling.