規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 3.1mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 108µA |
| Gate Charge(Qg)(Max) @ Vgs | 87 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6240 pF @ 40 V |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
概述
Description
The IPB031N08N5ATMA1 is an N-channel MOSFET from Infineon’s OptiMOS™ 5 series, designed for high-efficiency power applications.
### Key Features:
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low RDS(on): 3.1mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: TO-263-7 (D2PAK) for efficient thermal performance
### Applications:
- DC-DC converters
- Motor drives
- Battery management systems
- Industrial power supplies
This MOSFET offers low conduction losses, high power density, and robust thermal performance, making it ideal for demanding automotive and industrial applications.
### Key Features:
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low RDS(on): 3.1mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: TO-263-7 (D2PAK) for efficient thermal performance
### Applications:
- DC-DC converters
- Motor drives
- Battery management systems
- Industrial power supplies
This MOSFET offers low conduction losses, high power density, and robust thermal performance, making it ideal for demanding automotive and industrial applications.
Equivalent
Equivalent products to IPB031N08N5ATMA1 (80V, 30A, N-channel MOSFET) include:
- IRLB3813PbF (80V, 30A, TO-220)
- STP80NF08 (80V, 30A, TO-220)
- AOD4184 (80V, 30A, TO-220)
- FDP8878 (80V, 30A, TO-220)
Check datasheets for exact specs before substitution.
- IRLB3813PbF (80V, 30A, TO-220)
- STP80NF08 (80V, 30A, TO-220)
- AOD4184 (80V, 30A, TO-220)
- FDP8878 (80V, 30A, TO-220)
Check datasheets for exact specs before substitution.
Features
The IPB031N08N5ATMA1 is an N-channel MOSFET with the following key features:
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low On-Resistance (RDS(on)): 3.1mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Package: TO-263-7 (D²PAK), suitable for power applications
- Logic Level Gate Drive: Compatible with 5V gate drive (VGS(th) ~2V)
- Low Gate Charge (QG): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
Ideal for motor control, DC-DC converters, and power management in automotive/industrial systems.
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low On-Resistance (RDS(on)): 3.1mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Package: TO-263-7 (D²PAK), suitable for power applications
- Logic Level Gate Drive: Compatible with 5V gate drive (VGS(th) ~2V)
- Low Gate Charge (QG): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
Ideal for motor control, DC-DC converters, and power management in automotive/industrial systems.
Package
The IPB031N08N5ATMA1 is a power MOSFET in a TO-263-7 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications like automotive and industrial systems. It has seven pins, with a compact design for better PCB space utilization.
