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規格
| 屬性 | 價值 |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Series | TRENCHSTOP IGBT |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Unit Weight | 0.211644 oz |
| Factory Pack Quantity | 500 |
| Part # Aliases | SP000683064 IKP15N6TXK IKP15N60TXKSA1 |
| Technology | Si |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 600 V |
| Collector - Emitter Saturation Voltage | 1.5 V |
| Continuous Collector Current at 25 C | 26 A |
| Pd - Power Dissipation | 130 W |
| Gate - Emitter Leakage Current | 100 nA |
| Tradename | TRENCHSTOP |
| Height | 15.95 mm |
| Length | 10.36 mm |
| Width | 4.57 mm |
概述
Description
The IKP15N60T is a high-voltage power MOSFET designed for applications requiring efficient switching and control of electrical power. This device can handle a maximum drain-source voltage of 600V and a continuous drain current of 15A, making it suitable for various high-power applications, including power supplies, motor drives, and industrial equipment.
It features low on-resistance (RDS(on)), which minimizes power losses during operation, thereby enhancing overall efficiency. The IKP15N60T is typically housed in a TO-220 package, allowing for effective thermal management.
Its fast switching capabilities contribute to reduced switching losses, making it ideal for use in converters and inverters. Additionally, the MOSFET is designed to operate in high-temperature environments, ensuring reliability and durability in demanding conditions.
Overall, the IKP15N60T is a versatile component for engineers looking to implement efficient power management solutions in various electronic systems.
It features low on-resistance (RDS(on)), which minimizes power losses during operation, thereby enhancing overall efficiency. The IKP15N60T is typically housed in a TO-220 package, allowing for effective thermal management.
Its fast switching capabilities contribute to reduced switching losses, making it ideal for use in converters and inverters. Additionally, the MOSFET is designed to operate in high-temperature environments, ensuring reliability and durability in demanding conditions.
Overall, the IKP15N60T is a versatile component for engineers looking to implement efficient power management solutions in various electronic systems.
Equivalent
The IKP15N60T is a Power MOSFET with a voltage rating of 600V and a current rating of 15A. Equivalent products include the STP15NM60, IRF250, and MTP15N60E. When selecting an equivalent, ensure the voltage, current, Rds(on), and package type match your application requirements. Always verify with datasheets for specific characteristics and performance.
Features
The IKP15N60T is a power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage of 600V, suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current up to 15A, making it versatile for various circuits.
3. RDS(on): Low on-resistance, typically around 0.6 ohms, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: Typical VGS(th) of 2-4V, allowing for easy drive with low-voltage control signals.
5. Power Dissipation: Capable of handling significant power dissipation, making it reliable in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
7. Temperature Range: Can operate within a wide temperature range, enhancing its adaptability in different applications.
These features make the IKP15N60T suitable for applications such as switch mode power supplies, motor drivers, and industrial equipment.
1. Voltage Rating: Operates at a maximum drain-source voltage of 600V, suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current up to 15A, making it versatile for various circuits.
3. RDS(on): Low on-resistance, typically around 0.6 ohms, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: Typical VGS(th) of 2-4V, allowing for easy drive with low-voltage control signals.
5. Power Dissipation: Capable of handling significant power dissipation, making it reliable in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
7. Temperature Range: Can operate within a wide temperature range, enhancing its adaptability in different applications.
These features make the IKP15N60T suitable for applications such as switch mode power supplies, motor drivers, and industrial equipment.
Pinout
The IKP15N60T is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the high current flows out of the device when it's turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical applications.
The IKP15N60T is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current rating of up to 15A. It is often used in power switching applications, such as inverters and power supplies.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the high current flows out of the device when it's turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical applications.
The IKP15N60T is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current rating of up to 15A. It is often used in power switching applications, such as inverters and power supplies.
Manufacturer
The IKP15N60T is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the development of semiconductors and system solutions for various applications, including automotive, industrial, and power management sectors. Founded in 1999 as a spin-off from Siemens AG, Infineon is a leading provider of innovative semiconductor solutions that enhance energy efficiency and facilitate secure communication. The company focuses on technologies such as power semiconductors, microcontrollers, and sensors, catering to a wide range of industries, including automotive electronics, renewable energy, and the Internet of Things (IoT). Infineon is known for its commitment to sustainability and advancing technologies that contribute to a greener future.
Application
The IKP15N60T is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its key areas include:
1. Motor Drives: For controlling electric motors in industrial and consumer applications.
2. Switching Power Supplies: Inverters and converters for efficient energy management.
3. Welding Equipment: For high-power applications requiring precise control.
4. Renewable Energy Systems: Inverters for solar and wind energy conversion.
5. UPS Systems: Uninterruptible power supplies for backup energy solutions.
Overall, it is ideal for applications requiring high efficiency and reliability in power conversion and control.
1. Motor Drives: For controlling electric motors in industrial and consumer applications.
2. Switching Power Supplies: Inverters and converters for efficient energy management.
3. Welding Equipment: For high-power applications requiring precise control.
4. Renewable Energy Systems: Inverters for solar and wind energy conversion.
5. UPS Systems: Uninterruptible power supplies for backup energy solutions.
Overall, it is ideal for applications requiring high efficiency and reliability in power conversion and control.
Package
The IKP15N60T is typically packaged in a TO-220 form factor, which is a standard package for power transistors. This package provides good thermal performance and allows for easy mounting to heat sinks, making it suitable for high-power applications.