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HAT1091C-EL-E
+物料清單HAT1091C-EL-E - SILICON P CHANNE
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製造商部分 #HAT1091C-EL-E
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規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4V |
| Rds On(Max) @ Id Vgs | 175mOhm @ 800mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 2.6 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 200 pF @ 10 V |
| Power Dissipation (Max) | 830mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-CMFPAK |
