圖片僅供參考
規格
| 屬性 | 價值 |
| Manufacturer | JLCPCB Assembly |
| Package | BGA-153_11.5X13.0X0.50P |
概述
Equivalent
The H26M41103HPR is a NAND flash memory chip. Equivalent alternatives include:
- K9F4G08U0D (Samsung)
- MT29F4G08ABADA (Micron)
- TC58NVG2S0HTA00 (Toshiba)
These are 4Gb (512MB) SLC NAND chips with similar specifications. Verify pin compatibility and voltage requirements before substitution. For exact matches, consult datasheets or suppliers.
- K9F4G08U0D (Samsung)
- MT29F4G08ABADA (Micron)
- TC58NVG2S0HTA00 (Toshiba)
These are 4Gb (512MB) SLC NAND chips with similar specifications. Verify pin compatibility and voltage requirements before substitution. For exact matches, consult datasheets or suppliers.
Features
The H26M41103HPR is a high-performance NAND flash memory chip with the following key features:
- Capacity: 4Gb (512MB)
- Interface: Standard asynchronous NAND
- Voltage: 3.3V operation
- Organization: x8 I/O, 16-bit ECC support
- Speed: Fast read/write performance
- Endurance: High reliability with robust error correction
- Package: Industry-standard TSOP48
- Applications: Embedded systems, industrial, and consumer electronics
Designed for efficiency and durability, it suits demanding storage needs.
- Capacity: 4Gb (512MB)
- Interface: Standard asynchronous NAND
- Voltage: 3.3V operation
- Organization: x8 I/O, 16-bit ECC support
- Speed: Fast read/write performance
- Endurance: High reliability with robust error correction
- Package: Industry-standard TSOP48
- Applications: Embedded systems, industrial, and consumer electronics
Designed for efficiency and durability, it suits demanding storage needs.
Pinout
The H26M41103HPR is a 32-pin NAND flash memory chip from SK Hynix. Key functions include:
- Storage: 128Mb (16MB) capacity.
- Interface: Standard asynchronous NAND interface.
- Voltage: Operates at 3.3V.
- Pins: Includes control signals (CE#, WE#, RE#, WP#), I/O data lines (DQ0-DQ7), and power pins (VCC, VSS).
It is commonly used in embedded systems for data storage. For exact pinout details, refer to the datasheet.
- Storage: 128Mb (16MB) capacity.
- Interface: Standard asynchronous NAND interface.
- Voltage: Operates at 3.3V.
- Pins: Includes control signals (CE#, WE#, RE#, WP#), I/O data lines (DQ0-DQ7), and power pins (VCC, VSS).
It is commonly used in embedded systems for data storage. For exact pinout details, refer to the datasheet.
Manufacturer
The H26M41103HPR is a NAND flash memory chip manufactured by SK Hynix, a leading South Korean semiconductor company. SK Hynix specializes in producing memory solutions, including DRAM, NAND flash, and SSDs, and is one of the largest memory chip suppliers globally, competing with companies like Samsung and Micron.
The company is known for its innovation in high-performance memory technology, serving industries such as consumer electronics, data centers, and automotive. SK Hynix is part of the SK Group, a major conglomerate in South Korea.
The company is known for its innovation in high-performance memory technology, serving industries such as consumer electronics, data centers, and automotive. SK Hynix is part of the SK Group, a major conglomerate in South Korea.
Package
The H26M41103HPR is a BGA (Ball Grid Array) package type. It features a compact, surface-mount design with solder balls arranged in a grid pattern for high-density connections, commonly used in memory and IC applications. The exact dimensions and ball count can vary, so refer to the datasheet for specifics.
