GPIHV30SB5L

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GPIHV30SB5L

+物料清單

GANFET N-CH 1200V 30A TO263-5L

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90-日售後保障

正品保證

規格

屬性 價值
Supplier GaNPower
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 30A
Drive Voltage(Max Rds On Min Rds On) 6V
Vgs(th)(Max) @ Id 1.4V @ 3.5mA
Gate Charge(Qg)(Max) @ Vgs 8.25 nC @ 6 V
Vgs(Max) +7.5V, -12V
Input Capacitance(Ciss)(Max) @ Vds 236 pF @ 400 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die