規格
| 屬性 | 價值 |
| Supplier | General Electric |
| Package / Case | Bulk |
| Series | SiC Power |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 765A |
| Rds On(Max) @ Id Vgs | 2.23mOhm @ 765A, 20V |
| Vgs(th)(Max) @ Id | 4.5V @ 160mA |
| Gate Charge(Qg)(Max) @ Vgs | 2414nC @ 18V |
| Input Capacitance(Ciss)(Max) @ Vds | 58000pF @ 900V |
| Power - Max | 2350W |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Mounting Type | Chassis Mount |
