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GD25Q128ESIGR
+物料清單128MBIT NOR FLASH /3.3V /SOP8 20
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製造商GigaDevice電晶體(香港)有限公司
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製造商部分 #GD25Q128ESIGR
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有存貨6698
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 128Mb (16M x 8) |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 70µs, 2.4ms |
| AccessTime | 7 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.209, 5.30mm Width) |
概述
Description
Key features of the GD25Q128ESIGR include its fast read/write capabilities, support for standard, dual, and quad SPI modes, and its ability to operate at a wide voltage range, typically from 2.7V to 3.6V. The device also includes features like secure OTP memory, block protection, and a deep power-down mode to enhance security and energy efficiency.
The GD25Q128ESIGR is commonly used in applications where reliable data storage is crucial, and it is designed to withstand harsh environmental conditions, offering a robust solution for developers in various fields.
Equivalent
Features
1. Density: 128 Mbit capacity.
2. Interface: Standard SPI, supporting Dual/Quad I/O for improved speed.
3. Speed: High-speed clock frequencies, allowing fast read and write operations.
4. Sector Architecture: Organized in 256 byte pages, 4 KB sectors, 32 KB blocks, and 64 KB blocks for flexible erase and programming options.
5. Supply Voltage: Operates at a wide range of power supply voltages.
6. Temperature Range: Designed to operate over industrial temperature range for diverse applications.
7. Low Power Consumption: Features deep power-down mode and low standby current for energy efficiency.
8. Data Retention: Highly reliable with good data retention and endurance characteristics.
9. Security: Equipped with features like block protection and a status register for enhanced security.
These features make the GD25Q128ESIGR suitable for a variety of applications, including embedded systems, consumer electronics, and industrial devices.
Pinout
1. CS# (Chip Select): Activates the device when low.
2. DO (Data Out/SIO1): Serial data output; also used as a bidirectional data pin.
3. WP# (Write Protect/SIO2): Can be used to protect the status register or act as an I/O pin.
4. GND: Ground reference.
5. DI (Data In/SIO0): Serial data input; also used as a bidirectional data pin.
6. CLK (Clock): Provides clock input for the serial interface.
7. HOLD# (Hold/SIO3): Pauses serial communication without deselecting the chip or can be used as an I/O pin.
8. VCC: Power supply.
These pins facilitate SPI communication with the host microcontroller or processor, allowing for read, write, and erase operations on the Flash memory.
Manufacturer
Application
1. Consumer Electronics: Used in TVs, set-top boxes, and home appliances for firmware storage.
2. Computing: Employed in laptops, desktops, and peripherals for system BIOS and firmware.
3. Industrial Equipment: Utilized in machinery and control systems for configuration and program storage.
4. Networking Devices: Found in routers, switches, and modems for firmware and configuration data.
5. Automotive Systems: Used in infotainment systems, dashboards, and navigation units.
This flash memory offers reliability, durability, and fast read/write capabilities, making it suitable for a wide range of applications requiring non-volatile storage.