規格
| 屬性 | 價值 |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector Pulsed(Icm) | 35 A |
| Vce(on)(Max) @ Vge Ic | 3V @ 15V, 35A |
| Switching Energy | 2.66mJ (on), 4.35mJ (off) |
| Input Type | Standard |
| Gate Charge | 50 nC |
| Test Condition | 800V, 35A, 22Ohm, 15V |
| Reverse Recovery Time (trr) | 36 ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |