圖片僅供參考
SIC SCHOTTKY DIODE 650V 10A DFN8
-
製造商全球電力科技GPT
-
製造商部分 #G5S06510QT
-
包裹 TSFN-4
-
有存貨7408
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Global Power Technology-GPT |
| Package / Case | Cut Tape (CT),Tape & Box (TB) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 53A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 645pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN (8x8) |
