圖片僅供參考
G2R50MT33K
+物料清單3300V 50M TO-247-4 SIC MOSFET
-
製造商GeneSiC電晶體
-
製造商部分 #G2R50MT33K
-
有存貨5886
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Series | G2R™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 3300 V |
| Current - Continuous Drain(Id) @ 25°C | 63A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 40A, 20V |
| Vgs(th)(Max) @ Id | 3.5V @ 10mA (Typ) |
| Gate Charge(Qg)(Max) @ Vgs | 340 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 7301 pF @ 1000 V |
| FET Feature | Standard |
| Power Dissipation (Max) | 536W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
