圖片僅供參考
G2R1000MT17J
+物料清單SIC MOSFET N-CH 3A TO263-7
-
製造商GeneSiC電晶體
-
製造商部分 #G2R1000MT17J
-
有存貨6809
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | GeneSiC Semiconductor |
| Package | Tube |
| Series | G2R™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1700 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 2A, 20V |
| Vgs(th)(Max)@Id | 4V @ 2mA |
| Vgs(Max) | +20V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 139 pF @ 1000 V |
| PowerDissipation(Max) | 54W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263-7 |
