規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 27.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2730 pF @ 25 V |
| Power Dissipation (Max) | 155W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
概述
Description
The FQP55N10 is an N-channel MOSFET designed for high-power applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.028Ω (at VGS = 10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220 (easy to mount on heatsinks)
Common uses include power supplies, motor drivers, and DC-DC converters. Its high current handling and low RDS(on) minimize power losses, improving efficiency. Always ensure proper gate drive (typically 10V) and thermal management for optimal performance.
For detailed specs, refer to the datasheet.
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.028Ω (at VGS = 10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220 (easy to mount on heatsinks)
Common uses include power supplies, motor drivers, and DC-DC converters. Its high current handling and low RDS(on) minimize power losses, improving efficiency. Always ensure proper gate drive (typically 10V) and thermal management for optimal performance.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the FQP55N10 (100V, 55A N-channel MOSFET) include:
- IRF3205 (55V, 110A) – Lower voltage but higher current.
- IRL40B209 (100V, 40A) – Slightly lower current.
- STP55NF10 (100V, 55A) – Direct alternative.
- IXFH55N10 (100V, 55A) – Similar specs.
Check datasheets for exact compatibility in your circuit.
- IRF3205 (55V, 110A) – Lower voltage but higher current.
- IRL40B209 (100V, 40A) – Slightly lower current.
- STP55NF10 (100V, 55A) – Direct alternative.
- IXFH55N10 (100V, 55A) – Similar specs.
Check datasheets for exact compatibility in your circuit.
Features
The FQP55N10 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- High Power Handling: Up to 150W
- Avalanche Energy Rated: Enhances ruggedness
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
- Package: TO-220 (through-hole)
Commonly used in power supplies, motor control, and DC-DC converters. Offers a balance of high current capability and low conduction losses.
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- High Power Handling: Up to 150W
- Avalanche Energy Rated: Enhances ruggedness
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
- Package: TO-220 (through-hole)
Commonly used in power supplies, motor control, and DC-DC converters. Offers a balance of high current capability and low conduction losses.
Package
The FQP55N10 is an N-channel MOSFET available in a TO-220 package. This through-hole package is commonly used for power applications due to its robust thermal and electrical performance. It features three leads (gate, drain, source) and a metal tab for heat dissipation. The TO-220 package is suitable for high-power circuits, such as motor drivers or power supplies.
