規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 280mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 21 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1080 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 55W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概述
Description
The FQD12N20LTM is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
It is commonly used in switching power supplies, motor control, and DC-DC converters, offering low conduction losses and robust performance. The device includes built-in protection against ESD and is RoHS compliant.
For detailed specifications, refer to the datasheet from ON Semiconductor.
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
It is commonly used in switching power supplies, motor control, and DC-DC converters, offering low conduction losses and robust performance. The device includes built-in protection against ESD and is RoHS compliant.
For detailed specifications, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the FQD12N20LTM (200V, 12A N-channel MOSFET) include:
- IRF540N (100V, 33A) – Higher current but lower voltage.
- STP16NF20 (200V, 16A) – Slightly higher current rating.
- IRF640 (200V, 18A) – Higher current, similar voltage.
- FQP12N20 (200V, 12A) – Nearly identical specs.
Check datasheets for exact compatibility in your application.
- IRF540N (100V, 33A) – Higher current but lower voltage.
- STP16NF20 (200V, 16A) – Slightly higher current rating.
- IRF640 (200V, 18A) – Higher current, similar voltage.
- FQP12N20 (200V, 12A) – Nearly identical specs.
Check datasheets for exact compatibility in your application.
Features
The FQD12N20LTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max at VGS=10V)
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improved ruggedness
- Package: TO-252 (DPAK), surface-mount design
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
Ideal for power switching in DC-DC converters, motor control, and other high-efficiency applications.
- Voltage Rating: 200V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 0.28Ω (max at VGS=10V)
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improved ruggedness
- Package: TO-252 (DPAK), surface-mount design
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
Ideal for power switching in DC-DC converters, motor control, and other high-efficiency applications.
Pinout
The FQD12N20LTM is an N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G): Controls the switching operation (voltage applied here turns the MOSFET on/off).
2. Drain (D): Connects to the load (high-voltage/high-current side).
3. Source (S): Ground reference (connected to the circuit ground).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 12A
- Low On-Resistance (RDS(on)): Optimized for efficiency in power applications.
Typical Use: Power switching (e.g., DC-DC converters, motor control).
Package is surface-mount (DPAK), with the tab acting as the Drain pin for heat dissipation.
1. Gate (G): Controls the switching operation (voltage applied here turns the MOSFET on/off).
2. Drain (D): Connects to the load (high-voltage/high-current side).
3. Source (S): Ground reference (connected to the circuit ground).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 12A
- Low On-Resistance (RDS(on)): Optimized for efficiency in power applications.
Typical Use: Power switching (e.g., DC-DC converters, motor control).
Package is surface-mount (DPAK), with the tab acting as the Drain pin for heat dissipation.
Package
The FQD12N20LTM is a PowerTrench MOSFET from ON Semiconductor, available in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-current circuits.
