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FGY75N60SMD
+物料清單IGBT 600V 150A 750W POWER-247
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規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| ProductStatus | Obsolete |
| IGBTType | Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 150 A |
| Current-CollectorPulsed(Icm) | 225 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 75A |
| Power-Max | 750 W |
| SwitchingEnergy | 2.3mJ (on), 770µJ (off) |
| InputType | Standard |
| GateCharge | 248 nC |
| Td(on/off)@25°C | 24ns/136ns |
| TestCondition | 400V, 75A, 3Ohm, 15V |
| ReverseRecoveryTime(trr) | 55 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 Variant |
概述
Description
FGY75N60SMD is a high‑voltage, high‑current N‑channel MOSFET in an SMD package. The “75N60” suggests roughly 75 A continuous drain current with about 600 V drain–source rating, making it suitable for switching power stages in SMPS, motor drives, inverters, and similar applications. It acts as a fast, efficient switch controlled by the gate voltage.
Key specs to check in the datasheet:
- Vds ≈ 600 V; Id ≈ 75 A; Rds(on) at Vgs (often specified at 10 V, sometimes at 4.5 V)
- Gate threshold, total gate charge (Qgs, Qgd), switching speed
- Thermal metrics (Rθ(j-a)), package power dissipation
- Safe operating area and exact pinout for the specific SMD variant
For exact numbers and pin configuration, consult the manufacturer’s datasheet for your specific batch and SMD package (e.g., DPAK/TO-252).
Key specs to check in the datasheet:
- Vds ≈ 600 V; Id ≈ 75 A; Rds(on) at Vgs (often specified at 10 V, sometimes at 4.5 V)
- Gate threshold, total gate charge (Qgs, Qgd), switching speed
- Thermal metrics (Rθ(j-a)), package power dissipation
- Safe operating area and exact pinout for the specific SMD variant
For exact numbers and pin configuration, consult the manufacturer’s datasheet for your specific batch and SMD package (e.g., DPAK/TO-252).
Features
Here are the typical features of the FGY75N60SMD (N-channel MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 600 V
- Id (continuous): around 0.75 A (typical)
- Rds(on): roughly 1.5–2.0 Ω (typical) at Vgs = 10 V
- Gate threshold: ~2–4 V
- Fast switching with low gate charge
- Avalanche rugged / good SOA
- Package: surface-mount (SMD) type (e.g., DPAK/D2PAK style)
- Applications: high-voltage switching, offline SMPS, power adapters, isolated power supplies
Note: exact numbers (Rds(on), Id, Vgs(th)) can vary by lot; please consult the latest datasheet for precise values.
- N-channel enhancement-mode power MOSFET
- Vds: 600 V
- Id (continuous): around 0.75 A (typical)
- Rds(on): roughly 1.5–2.0 Ω (typical) at Vgs = 10 V
- Gate threshold: ~2–4 V
- Fast switching with low gate charge
- Avalanche rugged / good SOA
- Package: surface-mount (SMD) type (e.g., DPAK/D2PAK style)
- Applications: high-voltage switching, offline SMPS, power adapters, isolated power supplies
Note: exact numbers (Rds(on), Id, Vgs(th)) can vary by lot; please consult the latest datasheet for precise values.
Pinout
- Pin count: 3 pins (Gate, Drain, Source) with the drain also tied to the metal tab in the SMD package.
- Function: N-channel enhancement-mode power MOSFET used as a high‑voltage switch (typical for power supplies, motor drives, inverters).
- Function: N-channel enhancement-mode power MOSFET used as a high‑voltage switch (typical for power supplies, motor drives, inverters).
Application
FGY75N60SMD is a high-voltage, high‑current N‑channel MOSFET (600 V class, ~75 A) in an SMD package. Common applications: offline switch‑mode power supplies (AC–DC and DC–DC), LED drivers, solar/wind inverters, motor-drive/inverter stages, UPS input/output stages, and general power‑switching in industrial equipment and battery‑powered tools.
Package
FGY75N60SMD is an N-channel MOSFET in a surface-mount D-PAK (TO-252) package.
