規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| ProductStatus | Active |
| IGBTType | Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 120 A |
| Vce(on)(Max)@VgeIc | 2.4V @ 15V, 40A |
| Power-Max | 290 W |
| SwitchingEnergy | 1.19mJ (on), 460µJ (off) |
| InputType | Standard |
| GateCharge | 120 nC |
| Td(on/off)@25°C | 24ns/112ns |
| TestCondition | 400V, 40A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 45 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概述
Description
The FGH40N60UFDTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power conversion applications. It features a 600V maximum collector-emitter voltage and a continuous collector current of 75A, making it suitable for high-voltage and high-current applications. This IGBT is part of the UniFETTM family, which is known for its low saturation voltage and high-speed switching capabilities, enhancing overall system efficiency.
Key features include a robust and rugged design with a high-speed switching capability that minimizes power losses during operation. The device also includes a co-packaged fast recovery diode, which helps in reducing switching losses and improving thermal performance. It is typically used in applications such as motor drives, power supplies, and industrial inverters.
The FGH40N60UFDTU is encapsulated in a TO-247 package, providing good thermal and electrical conductivity. Its design allows for high efficiency and reliability in demanding environments, offering a compact solution that balances performance and cost-effectiveness for various power conversion needs.
Key features include a robust and rugged design with a high-speed switching capability that minimizes power losses during operation. The device also includes a co-packaged fast recovery diode, which helps in reducing switching losses and improving thermal performance. It is typically used in applications such as motor drives, power supplies, and industrial inverters.
The FGH40N60UFDTU is encapsulated in a TO-247 package, providing good thermal and electrical conductivity. Its design allows for high efficiency and reliability in demanding environments, offering a compact solution that balances performance and cost-effectiveness for various power conversion needs.
Equivalent
The FGH40N60UFDTU is a 600V, 40A N-channel IGBT. Equivalent products include:
1. IXGH40N60C2D1 - from IXYS, a similar 600V, 40A IGBT.
2. IRG4BC40UD - from Infineon, with similar specifications.
3. STGW40NC60VD - from STMicroelectronics, offering similar voltage and current ratings.
4. HGTG40N60A4 - from ON Semiconductor, with comparable specifications.
Always verify detailed specifications and compatibility with your application before selecting a substitute.
1. IXGH40N60C2D1 - from IXYS, a similar 600V, 40A IGBT.
2. IRG4BC40UD - from Infineon, with similar specifications.
3. STGW40NC60VD - from STMicroelectronics, offering similar voltage and current ratings.
4. HGTG40N60A4 - from ON Semiconductor, with comparable specifications.
Always verify detailed specifications and compatibility with your application before selecting a substitute.
Features
The FGH40N60UFDTU is a field-stop insulated-gate bipolar transistor (IGBT) designed for high-speed switching applications. Key features include:
1. Voltage Rating: Capable of handling a collector-emitter voltage (V_CE) up to 600V, making it suitable for medium to high voltage applications.
2. Current Capability: It supports a continuous collector current (I_C) of up to 80A, allowing it to handle significant power loads.
3. Switching Speed: Designed for high-speed switching, which is critical for efficiency in applications such as motor drives and power inverters.
4. Low Saturation Voltage: Offers low V_CE(sat), reducing power losses and improving overall efficiency.
5. Short-circuit Rated: Provides robustness in demanding conditions, protecting against circuit faults.
6. Tail Current Reduction: Features advanced technology to minimize tail current during turn-off, improving performance and reducing switching losses.
7. TO-247 Package: Comes in a standard TO-247 package for easy integration into circuits.
These features make the FGH40N60UFDTU suitable for a variety of industrial applications, including power supplies, motor drives, and induction heating.
1. Voltage Rating: Capable of handling a collector-emitter voltage (V_CE) up to 600V, making it suitable for medium to high voltage applications.
2. Current Capability: It supports a continuous collector current (I_C) of up to 80A, allowing it to handle significant power loads.
3. Switching Speed: Designed for high-speed switching, which is critical for efficiency in applications such as motor drives and power inverters.
4. Low Saturation Voltage: Offers low V_CE(sat), reducing power losses and improving overall efficiency.
5. Short-circuit Rated: Provides robustness in demanding conditions, protecting against circuit faults.
6. Tail Current Reduction: Features advanced technology to minimize tail current during turn-off, improving performance and reducing switching losses.
7. TO-247 Package: Comes in a standard TO-247 package for easy integration into circuits.
These features make the FGH40N60UFDTU suitable for a variety of industrial applications, including power supplies, motor drives, and induction heating.
Pinout
The FGH40N60UFDTU is an insulated gate bipolar transistor (IGBT) with a TO-247 package. It typically has three pins: the collector, the gate, and the emitter. The main function of this IGBT is to act as an electronic switch, combining high efficiency with fast switching capabilities. It is commonly used in power electronics applications, such as motor drives, power inverters, and other high-power circuits. The FGH40N60UFDTU is designed to handle significant voltage and current levels, making it suitable for demanding applications requiring efficient power management.
Manufacturer
The FGH40N60UFDTU is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a company that designs and manufactures semiconductors and other electronic components. The company provides solutions for a variety of markets, including automotive, industrial, cloud power, and Internet of Things (IoT). onsemi is known for its focus on energy-efficient products and technologies that enable smart power and sensing. Their portfolio includes power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices.
Application
The FGH40N60UFDTU is an Insulated Gate Bipolar Transistor (IGBT) often used in high-efficiency and high-speed switching applications. Key application areas include:
1. Inverters: Used in solar inverters and motor drive inverters for efficient energy conversion.
2. Power Supplies: Suitable for use in uninterruptible power supplies (UPS) and switch-mode power supplies (SMPS).
3. Induction Heating: Employed in induction cooktops and industrial induction heating systems.
4. Electric Vehicles: Used in the drive systems and charging circuits of electric vehicles.
5. Welding Equipment: Utilized in arc welding machines for better energy efficiency and performance.
These applications benefit from the IGBT's ability to handle high voltage and current with low on-state voltage drop.
1. Inverters: Used in solar inverters and motor drive inverters for efficient energy conversion.
2. Power Supplies: Suitable for use in uninterruptible power supplies (UPS) and switch-mode power supplies (SMPS).
3. Induction Heating: Employed in induction cooktops and industrial induction heating systems.
4. Electric Vehicles: Used in the drive systems and charging circuits of electric vehicles.
5. Welding Equipment: Utilized in arc welding machines for better energy efficiency and performance.
These applications benefit from the IGBT's ability to handle high voltage and current with low on-state voltage drop.
Package
The FGH40N60UFDTU is typically available in a TO-3P package type. This package type is suitable for high power applications and provides efficient thermal management, making it ideal for housing the Insulated Gate Bipolar Transistor (IGBT) that the FGH40N60UFDTU represents.