FGA25N120ANTD

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FGA25N120ANTD

+物料清單

onsemi NPTTIGBT TO3PN 25A 1200V

  • 製造商安森美

  • 製造商部分 #FGA25N120ANTD

  • 有存貨24769

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規格

屬性 價值
Packaging Tube
StandardPackQty 450

概述

Description

The FGA25N120ANTD is a type of Insulated Gate Bipolar Transistor (IGBT), which is a semiconductor device used for switching and amplifying electronic signals. Specifically, this IGBT is designed for high-efficiency and fast-switching applications. It features a high current capability with a continuous collector current of 25A and a collector-emitter voltage of 1200V, making it suitable for high-voltage applications.
Key characteristics of the FGA25N120ANTD include its low saturation voltage, which helps reduce power loss and improves efficiency. The device exhibits a robust design with a fast-switching capability, supporting high-frequency operations. It's often used in applications such as motor drives, inverters, and power converters.
The FGA25N120ANTD is packaged in a TO-247 package, providing good thermal performance and ease of mounting. It includes features like a rugged structure to withstand high electrical and thermal stress. Overall, this IGBT is well-suited for demanding applications that require high power handling and efficiency.

Equivalent

The FGA25N120ANTD is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) often used in power applications. Equivalent products from other manufacturers include:
1. STMicroelectronics: STGW30NC120HD
2. Infineon: IKW25N120T2
3. Vishay: IRG4BC30KD
4. Mitsubishi: CMF25N120
These alternatives offer similar voltage and current ratings and can be considered for similar applications, but always verify specifications to ensure compatibility.

Features

The FGA25N120ANTD is an Insulated Gate Bipolar Transistor (IGBT) with the following features:
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) rating of 1200V and a continuous collector current (I_C) rating of 50A, making it suitable for high-voltage and high-current applications.
2. Low Saturation Voltage: The device features low saturation voltage, which helps in reducing power losses and increases efficiency during operation.
3. High-Speed Switching: It is designed for high-speed switching applications, which is beneficial in applications that require fast turn-on and turn-off times.
4. Rugged Construction: The IGBT comes with robust construction, providing excellent reliability and durability under various operating conditions.
5. Short-Circuit Capability: It has short-circuit capability, enhancing its safety and robustness in critical applications.
6. Thermal Performance: The FGA25N120ANTD has excellent thermal performance, allowing for efficient heat dissipation and operation at higher temperatures.
These features make it ideal for use in industrial applications, motor drives, and power supply systems.

Pinout

The FGA25N120ANTD is an Insulated Gate Bipolar Transistor (IGBT) typically used in power electronics applications. It features a three-pin configuration:
1. Collector (C): This is the main terminal through which the current enters the IGBT from the power supply.
2. Gate (G): This terminal controls the IGBT. By applying a voltage to the gate, the device switches from non-conducting to conducting state.
3. Emitter (E): This is the terminal through which the current exits the IGBT after passing through the collector.
The FGA25N120ANTD is designed for high efficiency and fast switching, often used in applications such as motor drives, induction heating, and power inverters. It provides a good balance between conduction and switching losses, making it suitable for various high-power applications.

Manufacturer

The FGA25N120ANTD is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor company that provides a wide range of products and solutions for various industries, including automotive, industrial, communications, computing, and consumer electronics. They specialize in power and signal management, logic, discrete, and custom devices. As a company, onsemi focuses on energy-efficient innovations, aiming to enable customers to reduce global energy use.

Application

The FGA25N120ANTD is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power switching applications. Its typical application areas include:
1. Industrial Motor Drives: Provides efficient control of electric motors in industrial settings.
2. Inverters: Used in DC-AC inverters for renewable energy systems like solar panels.
3. Uninterruptible Power Supplies (UPS): Ensures continuous power supply by switching between power sources.
4. Welding Equipment: Facilitates efficient control of welding operations.
5. Switching Power Supplies: Used in SMPS to improve energy efficiency and reduce power loss.
These applications benefit from its high-speed switching and low power loss characteristics.

Package

The FGA25N120ANTD is an Insulated Gate Bipolar Transistor (IGBT) with a TO-3P package type. This package type is a through-hole design, providing efficient heat dissipation and suitable for high power applications.

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