FDS9958

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FDS9958

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MOSFET 2P-CH 60V 2.9A 8-SO

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規格

屬性 價值
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain(Id) @ 25°C 2.9A
Rds On(Max) @ Id Vgs 105mOhm @ 2.9A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 23nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1020pF @ 30V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

概述

Description

The FDS9958 is an N-channel dual MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 28 mΩ (at VGS = 4.5V), reducing power loss.
- High Current Handling: Supports up to 6.3A continuous drain current.
- Compact Package: Comes in an 8-pin SOIC, saving board space.
- Logic-Level Gate Drive: Operates at low gate voltages (as low as 2.5V), making it suitable for microcontroller-based systems.
Common uses include DC-DC converters, motor control, load switching, and battery protection circuits. Its dual-MOSFET configuration allows for efficient synchronous rectification in switching power supplies.
For detailed specs, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor). Always ensure proper heat dissipation in high-current applications.

Equivalent

The FDS9958 is a dual N-channel MOSFET. Equivalent or similar products include:
- IRF7314 (International Rectifier)
- Si4946DY (Vishay)
- DMN2010LSD (Diodes Inc.)
- AO4822 (Alpha & Omega)
These alternatives offer comparable specs (30V, ~5-10A, dual N-channel). Verify pinout and electrical characteristics for compatibility.

Features

The FDS9958 is an N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching performance
- Power Dissipation: 2.5W (max)
- Package: SO-8 (Surface Mount)
- Applications: DC-DC converters, motor control, load switching
It offers a good balance of low conduction losses and fast switching, making it suitable for power management in compact designs.

Pinout

The FDS9958 is an 8-pin dual N-channel MOSFET in a SOIC-8 package.
Pin Functions:
1. Source 1 (S1) – Source terminal of MOSFET 1.
2. Gate 1 (G1) – Gate control for MOSFET 1.
3. Source 2 (S2) – Source terminal of MOSFET 2.
4. Gate 2 (G2) – Gate control for MOSFET 2.
5. Drain 2 (D2) – Drain terminal of MOSFET 2.
6. Drain 2 (D2) – Internally connected to pin 5.
7. Drain 1 (D1) – Drain terminal of MOSFET 1.
8. Drain 1 (D1) – Internally connected to pin 7.
Key Features:
- Dual N-channel MOSFET (30V, 5.3A each).
- Low on-resistance (RDS(on)) for efficient switching.
- Logic-level gate drive (compatible with 5V signals).
Commonly used in power management, motor control, and load switching.

Application

The FDS9958 is a dual N-channel MOSFET used in various power management applications. Key areas include:
- Power Supplies: DC-DC converters, voltage regulators.
- Motor Control: H-bridge circuits for small motors.
- Load Switching: Efficient on/off control in portable devices.
- Battery Management: Protection circuits in power tools/consumer electronics.
- Automotive Systems: LED drivers, infotainment power control.
Its low on-resistance (RDS(on)) and compact SO-8 package make it ideal for space-constrained, high-efficiency designs.

Package

The FDS9958 is a dual N-channel PowerTrench MOSFET, available in an 8-pin SOIC (SO-8) package. This surface-mount package is compact and widely used for power management applications. It offers efficient thermal performance and is suitable for high-density PCB designs.