規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.8A |
| Rds On(Max) @ Id Vgs | 75mOhm @ 3.8A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 600pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The FDS9933A is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying signals. It is designed for applications requiring efficient power management, such as in power supplies, motor controls, and battery-powered devices.
Key features of the FDS9933A include low on-resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency applications. It typically operates at a voltage of 20V and can handle a continuous drain current of around 6.5A per channel, depending on the application's heat dissipation capabilities. The FDS9933A is encapsulated in a compact SO-8 package, which is suitable for space-constrained designs.
The MOSFET supports fast switching speeds, enhancing performance in high-frequency circuits. Its dual-channel design allows for more compact circuit layouts by integrating two transistors into a single package, simplifying design and reducing component count. Overall, the FDS9933A is valued for its reliability, efficiency, and compact form factor in various electronic applications.
Key features of the FDS9933A include low on-resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency applications. It typically operates at a voltage of 20V and can handle a continuous drain current of around 6.5A per channel, depending on the application's heat dissipation capabilities. The FDS9933A is encapsulated in a compact SO-8 package, which is suitable for space-constrained designs.
The MOSFET supports fast switching speeds, enhancing performance in high-frequency circuits. Its dual-channel design allows for more compact circuit layouts by integrating two transistors into a single package, simplifying design and reducing component count. Overall, the FDS9933A is valued for its reliability, efficiency, and compact form factor in various electronic applications.
Equivalent
The FDS9933A is a dual N-channel MOSFET often used in power management applications. Equivalent products include:
1. SI9933A - by Vishay Siliconix
2. IRF7329 - by Infineon Technologies (formerly International Rectifier)
3. BSS84 - by Diodes Incorporated
4. AO9933 - by Alpha & Omega Semiconductor
Always verify pin configuration and electrical characteristics to ensure compatibility in your specific application.
1. SI9933A - by Vishay Siliconix
2. IRF7329 - by Infineon Technologies (formerly International Rectifier)
3. BSS84 - by Diodes Incorporated
4. AO9933 - by Alpha & Omega Semiconductor
Always verify pin configuration and electrical characteristics to ensure compatibility in your specific application.
Features
The FDS9933A is a dual N-channel MOSFET featuring low on-resistance and high-speed switching capabilities, typically used in power management applications. Key features include:
1. Low On-Resistance: This feature ensures minimal power loss and efficient current conduction, contributing to improved overall system efficiency.
2. High-Speed Switching: Enables quick transition times, which is beneficial for applications requiring fast response times.
3. Low Gate Charge: Reduces the power required to drive the gate, enhancing the efficiency of the MOSFET in switching applications.
4. Compact Package: Typically available in a small SO-8 package, allowing for space-efficient designs.
5. Thermal Performance: Good thermal characteristics to handle heat dissipation efficiently, which is crucial for maintaining reliability and performance under load.
6. Applications: Often used in DC-DC converters, load switches, and other applications where efficient power handling is necessary.
These features make the FDS9933A suitable for a wide range of electronic applications requiring efficient power management and compact design.
1. Low On-Resistance: This feature ensures minimal power loss and efficient current conduction, contributing to improved overall system efficiency.
2. High-Speed Switching: Enables quick transition times, which is beneficial for applications requiring fast response times.
3. Low Gate Charge: Reduces the power required to drive the gate, enhancing the efficiency of the MOSFET in switching applications.
4. Compact Package: Typically available in a small SO-8 package, allowing for space-efficient designs.
5. Thermal Performance: Good thermal characteristics to handle heat dissipation efficiently, which is crucial for maintaining reliability and performance under load.
6. Applications: Often used in DC-DC converters, load switches, and other applications where efficient power handling is necessary.
These features make the FDS9933A suitable for a wide range of electronic applications requiring efficient power management and compact design.
Pinout
The FDS9933A is a dual N-channel MOSFET designed for high-efficiency power management applications. It comes in an SO-8 package and features a total of 8 pins. Here is a breakdown of the pin functions:
1. Pin 1 (Source 1 - S1): This is the source terminal for the first MOSFET.
2. Pin 2 (Gate 1 - G1): This is the gate terminal for the first MOSFET.
3. Pin 3 (Source 2 - S2): This is the source terminal for the second MOSFET.
4. Pin 4 (Gate 2 - G2): This is the gate terminal for the second MOSFET.
5. Pin 5, 6, 7, 8 (Drain 1 & Drain 2 - D1/D2): These are the drain terminals for both the MOSFETs, typically connected internally.
The FDS9933A is used for switching applications and is optimized for low on-resistance to provide efficient power delivery.
1. Pin 1 (Source 1 - S1): This is the source terminal for the first MOSFET.
2. Pin 2 (Gate 1 - G1): This is the gate terminal for the first MOSFET.
3. Pin 3 (Source 2 - S2): This is the source terminal for the second MOSFET.
4. Pin 4 (Gate 2 - G2): This is the gate terminal for the second MOSFET.
5. Pin 5, 6, 7, 8 (Drain 1 & Drain 2 - D1/D2): These are the drain terminals for both the MOSFETs, typically connected internally.
The FDS9933A is used for switching applications and is optimized for low on-resistance to provide efficient power delivery.
Manufacturer
The FDS9933A is manufactured by ON Semiconductor. ON Semiconductor is a global company specializing in the design and manufacture of semiconductor components. It provides a broad range of products, including power and signal management, logic, discrete, and custom devices for various applications in automotive, industrial, cloud power, and IoT sectors, among others. The company is known for its focus on energy-efficient solutions, aiming to support sustainable energy practices and improve the efficiency of electronic devices.
Application
The FDS9933A is a dual N-channel MOSFET commonly used in various electronic applications. Key areas include power management systems, where it helps in efficient power conversion and distribution. It's suitable for use in DC-DC converters and as a switching element in power supply circuits due to its low on-resistance and fast switching capabilities. Additionally, the FDS9933A is used in load switching and battery protection circuits within portable devices, providing overcurrent and short-circuit protection. Its compact size and thermal efficiency also make it ideal for use in consumer electronics, automotive applications, and telecom equipment.
Package
The FDS9933A is a dual N-channel MOSFET, and it comes in an SO-8 package, which is a standard small-outline package commonly used for surface-mount technology.
