規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 6.4A, 4.5A |
| Rds On(Max) @ Id Vgs | 26mOhm @ 6.4A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 540pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The FDS8958B is a dual N-channel PowerTrench MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Fast Switching: Optimized for high-frequency DC-DC converters and load switching.
- Compact Package: Housed in a SOIC-8 footprint, saving board space.
- Low Gate Charge (Qg): Reduces drive losses, improving performance in switching circuits.
Typical applications include synchronous rectification, motor control, and power supplies in consumer electronics, computing, and industrial systems.
For detailed specs, refer to the datasheet (available on ON Semiconductor’s website).
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Fast Switching: Optimized for high-frequency DC-DC converters and load switching.
- Compact Package: Housed in a SOIC-8 footprint, saving board space.
- Low Gate Charge (Qg): Reduces drive losses, improving performance in switching circuits.
Typical applications include synchronous rectification, motor control, and power supplies in consumer electronics, computing, and industrial systems.
For detailed specs, refer to the datasheet (available on ON Semiconductor’s website).
Equivalent
The FDS8958B is a dual N-channel MOSFET. Equivalent or similar products include:
- SI8958B (Vishay)
- DMN2019LSN (Diodes Inc.)
- FDS6898A (Fairchild/ON Semi)
- IRLML6402 (Infineon)
Check datasheets for exact specs like voltage, current, and package compatibility before substitution.
- SI8958B (Vishay)
- DMN2019LSN (Diodes Inc.)
- FDS6898A (Fairchild/ON Semi)
- IRLML6402 (Infineon)
Check datasheets for exact specs like voltage, current, and package compatibility before substitution.
Features
The FDS8958B is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Handling: 8.7A continuous (ID) per channel.
- Low On-Resistance: 28mΩ (typical at VGS = 10V).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2V).
- Dual Configuration: Two independent MOSFETs in a single SO-8 package.
- Low Power Loss: Optimized for high-efficiency applications.
- Applications: Power management, DC-DC converters, motor control, and load switching.
Compact and cost-effective, it’s ideal for space-constrained designs.
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Handling: 8.7A continuous (ID) per channel.
- Low On-Resistance: 28mΩ (typical at VGS = 10V).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2V).
- Dual Configuration: Two independent MOSFETs in a single SO-8 package.
- Low Power Loss: Optimized for high-efficiency applications.
- Applications: Power management, DC-DC converters, motor control, and load switching.
Compact and cost-effective, it’s ideal for space-constrained designs.
Pinout
The FDS8958B is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Source 1 (S1) – Source terminal of MOSFET 1.
2. Gate 1 (G1) – Gate terminal of MOSFET 1.
3. Drain 1 (D1) – Drain terminal of MOSFET 1.
4. Drain 2 (D2) – Drain terminal of MOSFET 2.
5. Gate 2 (G2) – Gate terminal of MOSFET 2.
6. Source 2 (S2) – Source terminal of MOSFET 2.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 4.5A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on))
- Logic-Level Gate Drive
Commonly used in power switching, DC-DC converters, and motor control.
Pin Functions:
1. Source 1 (S1) – Source terminal of MOSFET 1.
2. Gate 1 (G1) – Gate terminal of MOSFET 1.
3. Drain 1 (D1) – Drain terminal of MOSFET 1.
4. Drain 2 (D2) – Drain terminal of MOSFET 2.
5. Gate 2 (G2) – Gate terminal of MOSFET 2.
6. Source 2 (S2) – Source terminal of MOSFET 2.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 4.5A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on))
- Logic-Level Gate Drive
Commonly used in power switching, DC-DC converters, and motor control.
Application
The FDS8958B is a dual N-channel MOSFET used in various power management and switching applications. Key areas include:
1. DC-DC Converters – Efficient voltage regulation in power supplies.
2. Motor Control – Driving small motors in consumer electronics and automotive systems.
3. Load Switching – Power distribution in portable devices (e.g., laptops, smartphones).
4. Battery Management – Protection circuits in rechargeable battery systems.
5. LED Drivers – Controlling LED lighting systems.
Its low on-resistance and compact package (SOIC-8) make it suitable for space-constrained, high-efficiency designs.
1. DC-DC Converters – Efficient voltage regulation in power supplies.
2. Motor Control – Driving small motors in consumer electronics and automotive systems.
3. Load Switching – Power distribution in portable devices (e.g., laptops, smartphones).
4. Battery Management – Protection circuits in rechargeable battery systems.
5. LED Drivers – Controlling LED lighting systems.
Its low on-resistance and compact package (SOIC-8) make it suitable for space-constrained, high-efficiency designs.
Package
The FDS8958B is a dual N-channel PowerTrench MOSFET in an SO-8 package. It features a compact surface-mount design, suitable for high-efficiency power management applications. The SO-8 package ensures good thermal performance and ease of PCB integration.
