規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 61A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 41mOhm @ 30.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 75 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3380 pF @ 25 V |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
概述
Description
FDP61N20 is likely a code or identifier related to a specific product, course, or technical specification. Without additional context, it's challenging to provide a precise introduction. However, if referring to a course or technical module, FDP could stand for Faculty Development Program or a similar framework, and 61N20 might be a code representing a particular session, version, or topic within that program.
For example, if it's a course, FDP61N20 could be an advanced module designed for professional development, focusing on emerging technologies, pedagogical strategies, or industry-specific skills. Such programs typically aim to enhance participants' knowledge and capabilities in their respective fields, often through workshops, lectures, and interactive sessions.
If referring to a technical specification, FDP61N20 might denote a component's model number, part of a larger system or device, detailing its features, capabilities, and application areas. In this context, the introduction would involve understanding its technical aspects, intended use, and integration within broader systems.
For example, if it's a course, FDP61N20 could be an advanced module designed for professional development, focusing on emerging technologies, pedagogical strategies, or industry-specific skills. Such programs typically aim to enhance participants' knowledge and capabilities in their respective fields, often through workshops, lectures, and interactive sessions.
If referring to a technical specification, FDP61N20 might denote a component's model number, part of a larger system or device, detailing its features, capabilities, and application areas. In this context, the introduction would involve understanding its technical aspects, intended use, and integration within broader systems.
Equivalent
The FDP61N20 is an N-channel MOSFET. Equivalent or similar products with similar specifications might include the IRF3205, IRF540N, and STP55NF06, among others. However, it's crucial to compare specific parameters such as voltage, current ratings, on-resistance, and package type to ensure compatibility with your application. Always consult the datasheet of each alternative to verify suitability.
Features
The FDP61N20 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used for switching and amplification in electronic circuits. Here are its key features:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 200V, which allows it to handle moderate to high voltage applications.
2. Current Capacity: The drain current (I_D) is rated at 61A, enabling it to manage significant current loads.
3. Low On-Resistance: It features an R_DS(on) of approximately 0.042 ohms, which minimizes power losses and heat generation when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: Typically around 2-4V, ensuring it can be easily driven by microcontrollers or other low-voltage logic devices.
5. Thermal Performance: It is designed to dissipate heat effectively, supporting operational stability under high load conditions.
6. Package Type: Commonly available in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the FDP61N20 suitable for applications like power supplies, motor controllers, and other high-performance electronic circuits.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 200V, which allows it to handle moderate to high voltage applications.
2. Current Capacity: The drain current (I_D) is rated at 61A, enabling it to manage significant current loads.
3. Low On-Resistance: It features an R_DS(on) of approximately 0.042 ohms, which minimizes power losses and heat generation when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: Typically around 2-4V, ensuring it can be easily driven by microcontrollers or other low-voltage logic devices.
5. Thermal Performance: It is designed to dissipate heat effectively, supporting operational stability under high load conditions.
6. Package Type: Commonly available in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the FDP61N20 suitable for applications like power supplies, motor controllers, and other high-performance electronic circuits.
Pinout
The FDP61N20 is an N-channel MOSFET. It typically comes in a TO-220 package, which has three pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the 'on' state. The drain is connected to the load in a circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply in most applications. The source serves as the return path for the current flowing through the MOSFET.
These pins work together to allow the MOSFET to act as a switch or amplifier in electronic circuits. The FDP61N20 is designed for high-speed switching applications and can handle significant power levels due to its efficient design and low on-resistance.
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the 'on' state. The drain is connected to the load in a circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply in most applications. The source serves as the return path for the current flowing through the MOSFET.
These pins work together to allow the MOSFET to act as a switch or amplifier in electronic circuits. The FDP61N20 is designed for high-speed switching applications and can handle significant power levels due to its efficient design and low on-resistance.
Manufacturer
The FDP61N20 is manufactured by ON Semiconductor. ON Semiconductor, now officially known as onsemi, is a leading semiconductor supplier that provides a wide range of products, including power and signal management, logic, discrete, and custom devices for a variety of applications. The company is recognized for its focus on energy-efficient innovations, serving markets such as automotive, industrial, cloud computing, and the Internet of Things (IoT). onsemi is known for its comprehensive portfolio of semiconductor solutions and plays a significant role in advancing electronic technologies across numerous industries.
Application
FDP61N20 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in a variety of electronic applications. Its key application areas include:
1. Power Supply Units: Used in power management circuits for efficient switching.
2. Motor Control: Applicable in driving motors for industrial and consumer electronics.
3. Inverters: Used in DC-AC inverter circuits for renewable energy systems.
4. Battery Management Systems: Utilized in controlling charge and discharge cycles.
5. DC-DC Converters: Essential in step-down and step-up voltage conversion processes.
6. Switching Regulation: Employed in high-frequency switching regulators.
These applications benefit from the MOSFET’s high efficiency, fast switching speeds, and reliable performance under high current conditions.
1. Power Supply Units: Used in power management circuits for efficient switching.
2. Motor Control: Applicable in driving motors for industrial and consumer electronics.
3. Inverters: Used in DC-AC inverter circuits for renewable energy systems.
4. Battery Management Systems: Utilized in controlling charge and discharge cycles.
5. DC-DC Converters: Essential in step-down and step-up voltage conversion processes.
6. Switching Regulation: Employed in high-frequency switching regulators.
These applications benefit from the MOSFET’s high efficiency, fast switching speeds, and reliable performance under high current conditions.
Package
The FDP61N20 is typically housed in a TO-220 package. This package type is commonly used for power semiconductors, providing a balance of thermal performance and compact size.
