規格
| 屬性 | 價值 |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 1.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 1.3A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.9 nC @ 4.5 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 150 pF @ 15 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概述
Description
The FDN352AP is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Capacity: -5.7A (continuous drain current).
- Low On-Resistance: 50mΩ (max) at -10V gate drive, reducing power loss.
- Fast Switching: Optimized for high-speed performance.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection circuits in portable electronics. Its P-channel configuration simplifies circuit design by eliminating the need for a charge pump in high-side switching.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Voltage Rating: -30V (drain-to-source).
- Current Capacity: -5.7A (continuous drain current).
- Low On-Resistance: 50mΩ (max) at -10V gate drive, reducing power loss.
- Fast Switching: Optimized for high-speed performance.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection circuits in portable electronics. Its P-channel configuration simplifies circuit design by eliminating the need for a charge pump in high-side switching.
For detailed specs, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the FDN352AP (P-channel MOSFET) include:
- FDN304P (Similar specs, different package)
- SI2301DS (P-channel, comparable ratings)
- DMG2305UX (Low Vgs, SOT-23 package)
- BSS84 (Widely used alternative)
Check datasheets for exact voltage/current ratings. All are SOT-23 packaged P-MOSFETs.
- FDN304P (Similar specs, different package)
- SI2301DS (P-channel, comparable ratings)
- DMG2305UX (Low Vgs, SOT-23 package)
- BSS84 (Widely used alternative)
Check datasheets for exact voltage/current ratings. All are SOT-23 packaged P-MOSFETs.
Pinout
The FDN352AP is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- -30V drain-source voltage (VDS).
- -4.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- -30V drain-source voltage (VDS).
- -4.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.
