規格
| 屬性 | 價值 |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 35mOhm @ 3A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概述
Description
The FDN339AN is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low threshold voltage (VGS(th) ~1V), making it suitable for 3.3V or 5V logic systems.
- Low on-resistance (RDS(on) ~50mΩ at VGS=4.5V), reducing power loss.
- Compact SOT-23 package, ideal for space-constrained designs.
Common uses include power management, load switching, and battery-powered devices. Its fast switching speed and low gate charge enhance efficiency in DC-DC converters and portable electronics.
For detailed specs, refer to the datasheet or ON Semiconductor’s resources.
- Low threshold voltage (VGS(th) ~1V), making it suitable for 3.3V or 5V logic systems.
- Low on-resistance (RDS(on) ~50mΩ at VGS=4.5V), reducing power loss.
- Compact SOT-23 package, ideal for space-constrained designs.
Common uses include power management, load switching, and battery-powered devices. Its fast switching speed and low gate charge enhance efficiency in DC-DC converters and portable electronics.
For detailed specs, refer to the datasheet or ON Semiconductor’s resources.
Equivalent
The FDN339AN is an N-channel MOSFET. Equivalent or similar products include:
- FDN337N (Lower current rating)
- 2N7002 (Common SMD alternative)
- BS170 (Through-hole equivalent)
- DMN3404L (Similar specs)
- NDS7002A (Close match)
Check datasheets for exact compatibility, as voltage/current ratings may vary slightly.
- FDN337N (Lower current rating)
- 2N7002 (Common SMD alternative)
- BS170 (Through-hole equivalent)
- DMN3404L (Similar specs)
- NDS7002A (Close match)
Check datasheets for exact compatibility, as voltage/current ratings may vary slightly.
Features
The FDN339AN is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V drain-source voltage (VDS).
- Current Handling: 2.7A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = 10V.
- Gate Threshold Voltage: 1V (typical) for easy low-voltage drive.
- Fast Switching: Low gate charge (Qg = 8.5nC) for efficient performance.
- Power Efficiency: Low power loss due to minimal RDS(on).
- Package: SOT-23 (small form factor, suitable for compact designs).
- Applications: Power management, load switching, and DC-DC converters.
Compact, efficient, and ideal for low-voltage applications.
- Voltage Rating: 30V drain-source voltage (VDS).
- Current Handling: 2.7A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = 10V.
- Gate Threshold Voltage: 1V (typical) for easy low-voltage drive.
- Fast Switching: Low gate charge (Qg = 8.5nC) for efficient performance.
- Power Efficiency: Low power loss due to minimal RDS(on).
- Package: SOT-23 (small form factor, suitable for compact designs).
- Applications: Power management, load switching, and DC-DC converters.
Compact, efficient, and ideal for low-voltage applications.
Pinout
The FDN339AN is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- -30V drain-source voltage (VDS).
- -4.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- -30V drain-source voltage (VDS).
- -4.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.
Manufacturer
The FDN339AN is a P-channel MOSFET manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, known for energy-efficient innovations.
The FDN339AN is part of their small-signal MOSFET lineup, designed for low-voltage applications.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, known for energy-efficient innovations.
The FDN339AN is part of their small-signal MOSFET lineup, designed for low-voltage applications.
Application
The FDN339AN is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. Signal Switching – Low-voltage analog/digital signal routing.
4. Motor Control – Small motor drivers in consumer electronics.
5. DC-DC Converters – Efficient power conversion in compact circuits.
Its small SOT-23 package and low on-resistance (RDS(on)) make it ideal for space-constrained, low-power applications.
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. Signal Switching – Low-voltage analog/digital signal routing.
4. Motor Control – Small motor drivers in consumer electronics.
5. DC-DC Converters – Efficient power conversion in compact circuits.
Its small SOT-23 package and low on-resistance (RDS(on)) make it ideal for space-constrained, low-power applications.
