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FDMS2572
+物料清單POWER FIELD-EFFECT TRANSISTOR, 2
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製造商飛兆電晶體公司
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製造商部分 #FDMS2572
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有存貨6960
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | UltraFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 4.5A (Ta), 27A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 47mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2610 pF @ 75 V |
| PowerDissipation(Max) | 2.5W (Ta), 78W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-MLP (5x6), Power56 |
概述
Description
While I don't have specific information on FDMS2572, below are some common elements that introductory courses typically cover:
1. Overview of Subject Matter: Provides a broad understanding of the key topics, themes, and objectives.
2. Learning Outcomes: Outlines what students can expect to learn and achieve by the end of the course.
3. Course Structure: Details the format, including lectures, discussions, labs, or fieldwork.
4. Assessment Methods: Explains how students will be evaluated, such as through exams, projects, or class participation.
5. Reading Materials: Lists required and recommended texts or resources for deeper exploration of the topic.
6. Prerequisites: Notes any prior knowledge or courses required before enrolling in the course.
For specific details, consulting the course syllabus or contacting the relevant academic department would be beneficial.
Equivalent
1. NTMFS5C628NL by ON Semiconductor
2. BUK9Y38-60E by Nexperia
3. IRF540N by Infineon Technologies (ensure specifications match as closely as possible)
When selecting an equivalent, verify parameters like voltage rating, current capacity, RDS(on), and package type to ensure compatibility.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which allows it to conduct when a positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: It offers low on-resistance, which minimizes power losses and improves efficiency, especially important for power-sensitive applications.
3. High Current Capability: The MOSFET can handle significant amounts of current, making it suitable for various switching applications.
4. Fast Switching Speed: With fast switching times, the FDMS2572 is suitable for high-frequency applications, enhancing the performance of circuits where rapid switching is required.
5. Compact Package: It is typically available in a compact, surface-mount package, aiding in conserving space on circuit boards.
6. Thermal Efficiency: Designed to effectively dissipate heat, ensuring reliable operation under different thermal conditions.
These features make the FDMS2572 ideal for use in applications such as voltage regulation, motor control, and power conversion in both consumer and industrial electronics.
Pinout
1. Pins 1, 2, 3 (Source - S): These are connected internally and serve as the source terminals of the MOSFET.
2. Pin 4 (Gate - G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
3. Pins 5, 6, 7, 8 (Drain - D): These are also internally connected and serve as the drain terminals of the MOSFET.
This package and pin configuration are typical for power MOSFETs in SO-8 packages, facilitating easy integration into various power management applications. Always refer to the specific datasheet for the most accurate and detailed information regarding electrical characteristics and thermal performance.