規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.7A |
| Rds On(Max) @ Id Vgs | 72mOhm @ 3.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 655pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
FDMA1023PZ is likely a course code, possibly related to a foundation or introductory course in a subject like Film, Digital Media, or a similar field, though the specific content can vary depending on the institution offering it. Typically, such courses introduce students to key concepts, techniques, and tools relevant to the field.
In a course like this, students might explore the history and theory of digital media, gain hands-on experience with multimedia software, and learn about the production and post-production processes. The curriculum may cover topics like digital storytelling, media literacy, video editing, and the impact of digital media on society. Students might engage in projects that involve creating digital content, using platforms and technologies that are standard in the industry.
The course often serves as a foundation for more advanced studies, helping students develop critical thinking and technical skills essential for careers in digital media, film production, or related areas. Always refer to the specific course syllabus from the institution for detailed information.
In a course like this, students might explore the history and theory of digital media, gain hands-on experience with multimedia software, and learn about the production and post-production processes. The curriculum may cover topics like digital storytelling, media literacy, video editing, and the impact of digital media on society. Students might engage in projects that involve creating digital content, using platforms and technologies that are standard in the industry.
The course often serves as a foundation for more advanced studies, helping students develop critical thinking and technical skills essential for careers in digital media, film production, or related areas. Always refer to the specific course syllabus from the institution for detailed information.
Equivalent
Equivalent products for the FDMA1023PZ chip, a power MOSFET, may include:
1. FDMA1023NZ - Another Fairchild device with similar characteristics.
2. Si2312DS - By Vishay, offering comparable performance.
3. DMN3027LSD - By Diodes Incorporated, a suitable alternative.
4. 2N7002 - A generic MOSFET with similar specifications, though not identical.
Always verify specifications against your application needs before substituting.
1. FDMA1023NZ - Another Fairchild device with similar characteristics.
2. Si2312DS - By Vishay, offering comparable performance.
3. DMN3027LSD - By Diodes Incorporated, a suitable alternative.
4. 2N7002 - A generic MOSFET with similar specifications, though not identical.
Always verify specifications against your application needs before substituting.
Features
The FDMA1023PZ is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management. Key features include:
1. N-Channel MOSFET: Facilitates efficient switching and amplification in electronic circuits.
2. Low On-Resistance: Provides reduced power loss and increased efficiency.
3. High-Speed Switching: Enhances performance in applications requiring rapid on/off cycles.
4. Compact Package: Typically found in a Power56 or similar package, suitable for space-constrained applications.
5. Thermal Efficiency: Designed to manage heat effectively, ensuring reliability over extended periods.
6. High Maximum Drain Current: Supports significant current flow, useful for power-intensive applications.
7. Gate Charge and Capacitance: Optimized for minimal charge requirement, enhancing power efficiency.
8. Robust Design: Built to withstand electrical stress and reduce failure rates.
These features make the FDMA1023PZ suitable for various applications, including DC-DC converters, power management in portable devices, and other circuits where efficient power handling is critical.
1. N-Channel MOSFET: Facilitates efficient switching and amplification in electronic circuits.
2. Low On-Resistance: Provides reduced power loss and increased efficiency.
3. High-Speed Switching: Enhances performance in applications requiring rapid on/off cycles.
4. Compact Package: Typically found in a Power56 or similar package, suitable for space-constrained applications.
5. Thermal Efficiency: Designed to manage heat effectively, ensuring reliability over extended periods.
6. High Maximum Drain Current: Supports significant current flow, useful for power-intensive applications.
7. Gate Charge and Capacitance: Optimized for minimal charge requirement, enhancing power efficiency.
8. Robust Design: Built to withstand electrical stress and reduce failure rates.
These features make the FDMA1023PZ suitable for various applications, including DC-DC converters, power management in portable devices, and other circuits where efficient power handling is critical.
Pinout
The FDMA1023PZ is a dual N-channel MOSFET with specific characteristics suitable for various applications. It features an 8-pin configuration, primarily designed for efficient power management in portable electronics. The pin functions include:
1. Source1 (S1) - Connected to the source terminal of the first MOSFET.
2. Gate1 (G1) - Controls the first MOSFET by applying voltage to this terminal.
3. Drain1 (D1) - The drain terminal for the first MOSFET, connected to load.
4. Source2 (S2) - Connected to the source terminal of the second MOSFET.
5. Gate2 (G2) - Controls the second MOSFET by applying voltage to this terminal.
6. Drain2 (D2) - The drain terminal for the second MOSFET, connected to load.
7. Substrate (Common) - Often internally connected to power ground or another reference point.
8. Body (Common) - Similar purpose as substrate, can be part of the same internal connection.
These specifications make the FDMA1023PZ suitable for applications requiring compact and reliable MOSFET solutions.
1. Source1 (S1) - Connected to the source terminal of the first MOSFET.
2. Gate1 (G1) - Controls the first MOSFET by applying voltage to this terminal.
3. Drain1 (D1) - The drain terminal for the first MOSFET, connected to load.
4. Source2 (S2) - Connected to the source terminal of the second MOSFET.
5. Gate2 (G2) - Controls the second MOSFET by applying voltage to this terminal.
6. Drain2 (D2) - The drain terminal for the second MOSFET, connected to load.
7. Substrate (Common) - Often internally connected to power ground or another reference point.
8. Body (Common) - Similar purpose as substrate, can be part of the same internal connection.
These specifications make the FDMA1023PZ suitable for applications requiring compact and reliable MOSFET solutions.
Manufacturer
The FDMA1023PZ is a product manufactured by ON Semiconductor, a company known for designing and supplying a broad range of semiconductor components. ON Semiconductor, now formally known as onsemi, is an American company that specializes in power and signal management, logic, discrete, and custom devices for various applications, including automotive, industrial, cloud, and Internet of Things (IoT). The company is renowned for its focus on energy-efficient electronics and providing solutions that improve the performance and efficiency of electronic devices.
Application
The FDMA1023PZ is a dual N-channel MOSFET commonly used in various electronic applications. Its main application areas include power management systems, such as DC-DC converters and voltage regulators, due to its efficiency in switching operations. It is also utilized in load switch applications, enabling the control of power flow in electronic circuits. Additionally, it's used in motor drive systems, providing efficient control over motor operations. Its compact package makes it suitable for use in portable and space-constrained devices like smartphones and tablets. Moreover, it can be found in battery protection circuits, ensuring safe and efficient charging and discharging of lithium-ion batteries.
Package
The FDMA1023PZ is a dual N-channel MOSFET that comes in a PowerDI® 323 package. This package type is designed for efficient thermal performance and space-saving in electronic circuits.
