規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 55mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 238 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 12000 pF @ 25 V |
| Power Dissipation (Max) | 2500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264-3 |
概述
Description
The FDL100N50F refers to a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications that require high efficiency and reliability. It is known for its ability to handle high power and voltage levels, making it suitable for various uses such as power supplies, motor drives, and inverters. This component features a low on-resistance, which helps in reducing power loss and increasing efficiency. The FDL100N50F typically operates at a maximum drain-source voltage of 500V and can handle a continuous drain current of 100A, depending on the package and cooling conditions. Its design enables fast switching speeds, making it ideal for high-frequency applications. The device is usually housed in a TO-247 package, which aids in heat dissipation. Key characteristics include high avalanche energy capability and ruggedness, which enhance its durability in demanding environments. This MOSFET is ideal for designers looking to optimize performance in power management systems while maintaining reliability and efficiency.
Equivalent
The FDL100N50F is a power MOSFET, and equivalent products from other manufacturers may include similar N-channel MOSFETs with comparable voltage and current ratings. Some potential equivalents are the IRFP460from Infineon Technologies, STP55NF06 from STMicroelectronics, and FDP047N10 from ON Semiconductor. When selecting an equivalent, ensure that the voltage, current, Rds(on), and package type match the application requirements. Always verify specifications from the datasheets before substituting components.
Features
The FDL100N50F is a power MOSFET designed for high-efficiency applications. Key features include:
1. N-channel MOSFET: It operates efficiently as an N-channel device.
2. Voltage and Current Ratings: Typically, it supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 50A.
3. Low On-Resistance: Features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Its design supports rapid switching, reducing switching losses.
5. Thermal Performance: Offers excellent thermal management, often with a low thermal resistance junction-to-case.
6. Robust Design: Built to withstand significant power loads and conditions, ensuring reliability in demanding applications.
7. Package Type: Generally available in standard TO-220 or TO-247 packages, facilitating easy integration and heat dissipation.
8. Applications: Ideal for use in power supplies, motor controllers, and DC-DC converters.
These features make the FDL100N50F suitable for applications requiring efficient power management and reliability.
1. N-channel MOSFET: It operates efficiently as an N-channel device.
2. Voltage and Current Ratings: Typically, it supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 50A.
3. Low On-Resistance: Features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Its design supports rapid switching, reducing switching losses.
5. Thermal Performance: Offers excellent thermal management, often with a low thermal resistance junction-to-case.
6. Robust Design: Built to withstand significant power loads and conditions, ensuring reliability in demanding applications.
7. Package Type: Generally available in standard TO-220 or TO-247 packages, facilitating easy integration and heat dissipation.
8. Applications: Ideal for use in power supplies, motor controllers, and DC-DC converters.
These features make the FDL100N50F suitable for applications requiring efficient power management and reliability.
Pinout
The FDL100N50F is a power MOSFET, specifically an N-channel MOSFET used for switching applications. It typically comes in a TO-220 package, which is a common type of packaging for such transistors.
1. Pin Count: The TO-220 package usually has three pins.
2. Pin Functions:
- Gate (G): This pin controls the MOSFET. A voltage applied to the gate regulates the flow of current between the drain and source.
- Drain (D): This pin is where the current flows out of the MOSFET. It is the high potential end in an N-channel MOSFET.
- Source (S): This pin is where the current enters the MOSFET. It is the low potential end in an N-channel MOSFET.
These pins are arranged in a linear order on the TO-220 package. The FDL100N50F is designed for high efficiency and high-speed switching, making it suitable for applications like power supply regulation, motor drive controllers, and other high-power systems.
1. Pin Count: The TO-220 package usually has three pins.
2. Pin Functions:
- Gate (G): This pin controls the MOSFET. A voltage applied to the gate regulates the flow of current between the drain and source.
- Drain (D): This pin is where the current flows out of the MOSFET. It is the high potential end in an N-channel MOSFET.
- Source (S): This pin is where the current enters the MOSFET. It is the low potential end in an N-channel MOSFET.
These pins are arranged in a linear order on the TO-220 package. The FDL100N50F is designed for high efficiency and high-speed switching, making it suitable for applications like power supply regulation, motor drive controllers, and other high-power systems.
Manufacturer
The FDL100N50F is manufactured by Fuji Electric. Fuji Electric is a Japanese company that specializes in the manufacture of electrical equipment and components. It operates in various sectors including energy, industrial systems, and electronic devices. The company is known for its work in power electronics, semiconductors, and automation systems, providing solutions to enhance energy efficiency and productivity across industries.
Application
The FDL100N50F is a power MOSFET, typically used in applications requiring high power handling and efficiency. Its common application areas include:
1. Power Supply Units (PSUs): Used for switching and controlling power in various types of power supplies.
2. Motor Drives: Utilized in controlling motors in industrial and automotive applications.
3. Inverters: Employed in DC to AC conversion systems, such as solar inverters.
4. Switching Regulators: Used for efficient voltage regulation in electronic devices.
5. UPS Systems: Utilized in uninterruptible power supplies for reliable power delivery.
These applications benefit from its high current capacity and efficient switching characteristics.
1. Power Supply Units (PSUs): Used for switching and controlling power in various types of power supplies.
2. Motor Drives: Utilized in controlling motors in industrial and automotive applications.
3. Inverters: Employed in DC to AC conversion systems, such as solar inverters.
4. Switching Regulators: Used for efficient voltage regulation in electronic devices.
5. UPS Systems: Utilized in uninterruptible power supplies for reliable power delivery.
These applications benefit from its high current capacity and efficient switching characteristics.
Package
The package type for the FDL100N50F is a TO-264, which is a through-hole, high-power transistor package commonly used for power semiconductors like MOSFETs and IGBTs.
