FDC637BNZ

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FDC637BNZ

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MOSFET N-CH 20V 6.2A SUPERSOT6

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規格

屬性 價值
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 6.2A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 24mOhm @ 6.2A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 12 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 895 pF @ 10 V
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6

概述

Description

The term "FDC637BNZ" appears to refer to a specific electronic component, likely a transistor or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), used in various electronic applications. These components are crucial in managing and amplifying electronic signals within circuits.
The "FDC" prefix typically indicates the manufacturer's series or family of components, while the numbers and letters that follow provide specific details about the component's specifications, such as current or voltage ratings, package type, or other electrical characteristics.
For precise applications, the datasheet provided by the manufacturer would offer detailed information, including pin configurations, electrical characteristics, thermal data, and recommended usage scenarios. This information is essential for engineers or hobbyists incorporating this component into their designs to ensure proper functionality and reliability.
For more comprehensive knowledge, consulting the datasheet or technical resources from the manufacturer or distributor is advisable.

Equivalent

The FDC637BNZ is a dual N-channel MOSFET from ON Semiconductor. Equivalent products include:
1. SI2302DS-T1-GE3 by Vishay.
2. BSS138 from Nexperia or Fairchild.
3. 2N7002, available from various manufacturers like Nexperia or ON Semiconductor.
When selecting an equivalent, ensure that the voltage, current ratings, and package type match your specific application requirements. Always refer to the datasheets for detailed specifications.

Features

The FDC637BNZ is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching applications. Key features of this component include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V, which indicates the maximum voltage it can handle between the drain and source terminals.

2. Current Rating: It supports a continuous drain current (I_D) of up to 6A, allowing it to manage moderate power loads.

3. Low On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of approximately 25mΩ, which helps in reducing power losses and improving efficiency.
4. Package Type: It comes in a compact SO-8 package, suitable for surface-mount applications, contributing to efficient space utilization on printed circuit boards.
5. Thermal Characteristics: It includes features for effective thermal management, ensuring reliable operation under various conditions.
6. Fast Switching: The FDC637BNZ is designed for fast switching speeds, making it suitable for applications that require quick on-off cycles, such as in DC-DC converters and power management systems.
These features make the FDC637BNZ an efficient and compact choice for a variety of electronic applications.

Pinout

The FDC637BNZ is an N-channel MOSFET commonly used in electronic circuits. It comes in a SuperSOT-6 package, which consists of 6 pins. Here is a concise breakdown of its pin count and functions:
1. Pin Count: 6 pins
2. Pin Functions:
- Pin 1 (G - Gate): This pin is used to control the MOSFET by applying a voltage that switches the device on or off.
- Pin 2 (S - Source): The source pin is where the charge carriers enter the MOSFET; it is typically connected to ground in most N-channel applications.
- Pin 3 (S - Source): This is often internally connected to Pin 2, forming a common connection for the source terminal.
- Pin 4 (G - Gate): Another gate pin for controlling the device.
- Pin 5 (D - Drain): The drain pin is where the charge carriers exit the MOSFET. It is connected to the load.
- Pin 6 (D - Drain): Usually internally connected to Pin 5 to provide a common drain terminal.
This configuration allows the FDC637BNZ to be effectively used in switching applications and power management circuits.

Manufacturer

The FDC637BNZ is manufactured by ON Semiconductor, a company known for producing semiconductors and other electronic components. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions. They provide a wide range of products including power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. These products support the automotive, industrial, cloud power, and IoT markets. The company is recognized for its focus on energy-efficient innovations and has a significant presence in the global electronics industry.

Application

The FDC637BNZ is a dual N-channel MOSFET designed for low-voltage applications. Its primary application areas include power management in portable devices, load switching, and DC-DC conversion. It's suitable for use in battery-powered equipment due to its low on-resistance and efficient energy usage. Additionally, it can be utilized in motor control circuits, power regulation systems, and as a part of power distribution networks in consumer electronics. The device's small package makes it ideal for compact circuit designs.

Package

The FDC637BNZ is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that comes in a PowerPAK® SO-8 package. This package type is designed to provide efficient thermal performance and reduced footprint, suitable for various applications requiring compact and reliable MOSFET solutions.