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FDB110N15A
+物料清單POWER FIELD-EFFECT TRANSISTOR, 9
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製造商飛兆電晶體公司
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製造商部分 #FDB110N15A
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有存貨18331
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規格
| 屬性 | 價值 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 92A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11mOhm @ 92A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4510 pF @ 75 V |
| Power Dissipation (Max) | 234W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
概述
Description
These MOSFETs are known for low on-state resistance, which minimizes energy loss and heat generation, making them suitable for high-power applications. The term "FDB" could refer to a particular manufacturer's product line or series, with specific features like enhanced thermal performance or rugged construction. Overall, the FDB110N15A is an integral component for engineers and designers looking to implement reliable and efficient power control systems in various electronic devices. Always refer to the specific datasheet provided by the manufacturer for detailed technical specifications.
Equivalent
- IRF3205 from Infineon
- STF40N60M2 from STMicroelectronics
- IXFH64N10 from IXYS
Always compare key specifications like voltage, current ratings, and Rds(on) to ensure compatibility.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 150V, making it suitable for medium to high-voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of up to 110A, providing high current carrying capability.
3. R_DS(on): The on-resistance is typically low, which reduces power loss during operation and increases efficiency.
4. Package: The FDB110N15A is typically available in a TO-220 package, offering good thermal performance and ease of mounting on heatsinks for enhanced heat dissipation.
5. Applications: It is commonly used in power supply circuits, motor controllers, and other power management systems.
6. Performance: Provides fast switching speeds and high efficiency, crucial for applications requiring quick response and power conservation.
These features make the FDB110N15A a reliable choice for designers looking to implement high-efficiency power management solutions.
Pinout
The FDB110N15A comes in a TO-263 package, which is a surface-mount package type. This package typically has three pins:
1. Gate (G): This pin controls the MOSFET’s operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET.
3. Source (S): This pin is where the current exits the MOSFET.
The FDB110N15A is designed for low on-resistance and high efficiency, making it suitable for high-current applications such as power supplies, motor controllers, and other electronic devices requiring efficient power management.