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FDB0630N1507L
+物料清單MOSFET N-CH 150V 130A TO263-7
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製造商部分 #FDB0630N1507L
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規格
| 屬性 | 價值 |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9895 pF @ 75 V |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | FDB0630 |
概述
Description
The FDB0630N1507L is a type of insulated gate bipolar transistor (IGBT) designed for high-efficiency power applications. It features a low on-state voltage drop and fast switching capabilities, making it suitable for various uses, including motor drives, inverters, and power supplies.
Key specifications include a maximum voltage rating (V_CE) of 600V, a continuous collector current (I_C) of 30A, and a maximum switching frequency of around 20 kHz. The device is packaged in a DPAK or TO-220 format for effective thermal management and ease of integration into circuits.
The FDB0630N1507L is particularly valued for its robustness and reliability in demanding environments, making it ideal for industrial applications. Its performance characteristics help to improve system efficiency and reduce thermal stress, contributing to longer device life and lower operational costs.
For optimal performance, proper heat sinking and thermal management are recommended during implementation.
Key specifications include a maximum voltage rating (V_CE) of 600V, a continuous collector current (I_C) of 30A, and a maximum switching frequency of around 20 kHz. The device is packaged in a DPAK or TO-220 format for effective thermal management and ease of integration into circuits.
The FDB0630N1507L is particularly valued for its robustness and reliability in demanding environments, making it ideal for industrial applications. Its performance characteristics help to improve system efficiency and reduce thermal stress, contributing to longer device life and lower operational costs.
For optimal performance, proper heat sinking and thermal management are recommended during implementation.
Equivalent
The FDB0630N1507L is a MOSFET known for its low on-resistance and high efficiency. Equivalent products include the IRF3205, STP75NF75, and AOD5N60. However, always check specific datasheets for voltage, current ratings, and package compatibility to ensure proper substitution in your application.
Features
The FDB0630N1507L is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power circuits.
2. Current Rating: It can handle continuous drain currents up to 30A, ensuring robust performance in demanding applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), which reduces power losses and enhances efficiency, typically around 7.5 mΩ.
4. Fast Switching: The device supports fast switching speeds, important for high-frequency applications.
5. Package Type: Usually packaged in a TO-220 or similar configuration, allowing for effective heat dissipation.
6. Thermal Performance: The MOSFET features good thermal stability, ensuring reliable operation under varying temperature conditions.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power electronic systems.
These features make the FDB0630N1507L a versatile choice for engineers in need of efficient power management solutions.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power circuits.
2. Current Rating: It can handle continuous drain currents up to 30A, ensuring robust performance in demanding applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), which reduces power losses and enhances efficiency, typically around 7.5 mΩ.
4. Fast Switching: The device supports fast switching speeds, important for high-frequency applications.
5. Package Type: Usually packaged in a TO-220 or similar configuration, allowing for effective heat dissipation.
6. Thermal Performance: The MOSFET features good thermal stability, ensuring reliable operation under varying temperature conditions.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power electronic systems.
These features make the FDB0630N1507L a versatile choice for engineers in need of efficient power management solutions.
Pinout
The FDB0630N1507L is a PowerMOSFET from ON Semiconductor, designed for use in various power applications. It features a TO-220 package with a total of 3 pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET's switching and is typically connected to a gate driver.
2. Drain (D) - This pin is the output where the load is connected; it carries the current from the source.
3. Source (S) - This pin is connected to the ground or negative side of the circuit and serves as the return path for current.
The FDB0630N1507L is characterized by low on-resistance and high-speed performance, making it suitable for applications such as DC-DC converters, motor drivers, and other power management systems. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET's switching and is typically connected to a gate driver.
2. Drain (D) - This pin is the output where the load is connected; it carries the current from the source.
3. Source (S) - This pin is connected to the ground or negative side of the circuit and serves as the return path for current.
The FDB0630N1507L is characterized by low on-resistance and high-speed performance, making it suitable for applications such as DC-DC converters, motor drivers, and other power management systems. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
The FDB0630N1507L is manufactured by ON Semiconductor, a global leader in semiconductor solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and mixed-signal devices, as well as sensors and logic components. The company focuses on providing energy-efficient solutions and innovative technologies for various applications, including automotive, industrial, and consumer electronics. Established in 1999, ON Semiconductor has grown through a series of acquisitions and now operates in multiple locations worldwide, serving diverse markets and addressing the growing demand for efficient electronic components.
Application
The FDB0630N1507L is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it ideal for use in automotive electronics, renewable energy systems, and industrial automation. Additionally, it can be used in consumer electronics for efficient power delivery and thermal management. Its robustness supports applications requiring high efficiency and thermal performance.
Package
The FDB0630N1507L is typically packaged in a TO-220 format, which is a commonly used package type for power MOSFETs. This package provides good thermal performance and facilitates easy mounting on heatsinks for efficient heat dissipation.
