規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3.1mOhm @ 75A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 220 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 15160 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
概述
Description
The FDB031N08 is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 80V
- Current Rating: 110A (pulsed) / 50A (continuous)
- Low On-Resistance (RDS(on)): 3.1 mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed operation
- Package: TO-263 (D2PAK), suitable for power management
Commonly used in DC-DC converters, motor drives, and load switches, it offers low conduction losses and robust thermal performance. Ensure proper gate drive (VGS ≥ 10V for full performance) and heatsinking for high-current applications.
For detailed specs, refer to the datasheet.
- Voltage Rating: 80V
- Current Rating: 110A (pulsed) / 50A (continuous)
- Low On-Resistance (RDS(on)): 3.1 mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed operation
- Package: TO-263 (D2PAK), suitable for power management
Commonly used in DC-DC converters, motor drives, and load switches, it offers low conduction losses and robust thermal performance. Ensure proper gate drive (VGS ≥ 10V for full performance) and heatsinking for high-current applications.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the FDB031N08 (80V, 30A N-channel MOSFET) include:
- IRFB3206 (75V, 30A)
- STP80NF08 (80V, 80A)
- IRL1004 (40V, 130A, but similar use cases)
- AOD4184 (80V, 30A)
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in voltage/current ratings.
- IRFB3206 (75V, 30A)
- STP80NF08 (80V, 80A)
- IRL1004 (40V, 130A, but similar use cases)
- AOD4184 (80V, 30A)
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in voltage/current ratings.
Features
The FDB031N08 is an N-channel MOSFET with the following key features:
- Voltage Rating: 80V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 3.1 mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), suitable for surface mounting
- Gate Charge (Qg): Low (~30nC typical), reducing switching losses
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
- Voltage Rating: 80V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 3.1 mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), suitable for surface mounting
- Gate Charge (Qg): Low (~30nC typical), reducing switching losses
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
Package
The FDB031N08 is an N-channel MOSFET from ON Semiconductor, available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-current circuits.
