規格
| 屬性 | 價值 |
| Package | Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 155mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 105 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 5140 pF @ 25 V |
| PowerDissipation(Max) | 310W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PN |
概述
Description
The FDA28N50 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 500V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.23Ω
- Fast Switching: Optimized for efficiency in power supplies, motor drives, and inverters.
- Package: TO-247, ensuring good thermal performance.
It is commonly used in SMPS (Switched-Mode Power Supplies), industrial systems, and automotive applications where robust performance and reliability are critical. The MOSFET’s low gate charge and high avalanche energy tolerance enhance its durability in demanding environments.
For detailed specifications, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor).
- Voltage Rating: 500V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.23Ω
- Fast Switching: Optimized for efficiency in power supplies, motor drives, and inverters.
- Package: TO-247, ensuring good thermal performance.
It is commonly used in SMPS (Switched-Mode Power Supplies), industrial systems, and automotive applications where robust performance and reliability are critical. The MOSFET’s low gate charge and high avalanche energy tolerance enhance its durability in demanding environments.
For detailed specifications, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor).
Equivalent
Equivalent products to the FDA28N50 (500V, 28A N-channel MOSFET) include:
- IRFP450 (500V, 14A, higher RDS(on))
- STP28N50M2 (500V, 28A, similar specs)
- IXFH28N50P (500V, 28A, comparable performance)
- FDPF28N50 (500V, 28A, Fairchild alternative)
Check datasheets for exact compatibility in your circuit.
- IRFP450 (500V, 14A, higher RDS(on))
- STP28N50M2 (500V, 28A, similar specs)
- IXFH28N50P (500V, 28A, comparable performance)
- FDPF28N50 (500V, 28A, Fairchild alternative)
Check datasheets for exact compatibility in your circuit.
Features
The FDA28N50 is a 500V, 28A N-channel Power MOSFET with the following key features:
- Voltage Rating: 500V (Drain-Source, VDSS)
- Current Rating: 28A (Continuous Drain Current, ID)
- Low On-Resistance (RDS(on)): 0.19Ω (max) @ 10V gate drive
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Energy Rated: Improved ruggedness
- Low Gate Charge (Qg): Reduces switching losses
- TO-252 (DPAK) Package: Compact and suitable for surface-mount designs
Commonly used in switching power supplies, motor control, and inverters due to its high voltage and current handling with low conduction losses.
- Voltage Rating: 500V (Drain-Source, VDSS)
- Current Rating: 28A (Continuous Drain Current, ID)
- Low On-Resistance (RDS(on)): 0.19Ω (max) @ 10V gate drive
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Energy Rated: Improved ruggedness
- Low Gate Charge (Qg): Reduces switching losses
- TO-252 (DPAK) Package: Compact and suitable for surface-mount designs
Commonly used in switching power supplies, motor control, and inverters due to its high voltage and current handling with low conduction losses.
Package
The FDA28N50 is a power MOSFET typically available in a TO-3P(N) package. This package is a through-hole type with three leads, designed for high-power applications, offering good thermal performance and mechanical strength. It is commonly used in switching power supplies, motor controls, and other high-current circuits. The TO-3P(N) package ensures efficient heat dissipation.
