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DMN62D0U-7
+物料清單MOSFET N-CH 60V 380MA SOT23
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製造商二極體公司
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製造商部分 #DMN62D0U-7
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有存貨3993
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規格
| 屬性 | 價值 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 380mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 100mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.5 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 32 pF @ 30 V |
| Power Dissipation (Max) | 380mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概述
Description
Key features of the DMN62D0U-7 include:
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs, which allow for compact designs by integrating two transistors in one package.
2. Low On-Resistance: This characteristic ensures minimal power loss during operation, enhancing energy efficiency.
3. Fast Switching Speed: Enables rapid transitions between on and off states, crucial for high-speed applications.
4. Small Package: Typically available in a SOT-363 package, it supports space-constrained designs.
5. Thermal Efficiency: Designed to handle significant power while maintaining thermal stability.
Overall, the DMN62D0U-7 is favored for its balance of performance, efficiency, and size, making it an excellent choice for modern electronic applications requiring reliable and compact power management solutions.
Equivalent
1. Fairchild/Nexperia FDN5618PZ
2. Vishay SI7930BDN
3. ON Semiconductor NTMFS4935NT1G
Ensure to check the datasheets for exact specifications like threshold voltage, Rds(on), and package type to confirm compatibility.
Features
1. Dual N-Channel Configuration: Allows for compact design and efficient utilization of board space.
2. Low On-Resistance: Offers reduced power loss and improved efficiency, suitable for high-frequency switching applications.
3. Small Package Size: Typically available in a compact package, making it ideal for space-constrained applications.
4. Fast Switching Speed: Enhances performance in circuits requiring rapid switching operations.
5. High Current Capacity: Supports significant current loads, suitable for various power handling needs.
6. Robust Thermal Performance: Provides effective heat dissipation, supporting stability in demanding conditions.
7. ESD Protection: Includes features for protection against electrostatic discharge, increasing reliability.
8. Wide Operating Temperature Range: Ensures functionality across various environmental conditions.
These features make the DMN62D0U-7 a versatile component for applications in consumer electronics, automotive systems, and other fields requiring reliable and efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): This pin is one of the main terminals where the current flows in or out. It is connected to the load in most applications.
3. Source (S): This is the other terminal for current flow, usually connected to ground in many applications.
This transistor is typically employed in low-voltage and low-current applications. The small package size makes it suitable for compact circuit designs where board space is limited.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulators.
2. Switching Applications: Suitable for load switching in battery-powered devices.
3. Consumer Electronics: Used in smartphones, tablets, and other portable devices for power distribution and management.
4. Industrial Automation: Employed in control systems and actuators.
5. Automotive Systems: Applied in infotainment systems and lighting controls.
These applications benefit from its low on-resistance and high-speed switching capabilities.